Kabushiki Kaisha Toshiba

Yorito Kakiuchi

Takao Noda

Wataru Saito

Akira Yoshioka

Hidetoshi Fujimoto

Yasunobu Saito

Tomohiro Nitta

Ryoichi Ohara

Tetsuya Ohno

Takaaki Yasumoto

Kenya Sano

Naoko Yanase

Shingo Masuko

According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes: a first semiconductor layer including AlGaN (0&#x2266;X&#x2266;1); a second semiconductor layer provided on the first semiconductor layer, including AlGaN (0&#x2266;Y&#x2266;1, X&#x3c;Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the second semiconductor layer; and a gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode. A region of the second semiconductor layer below the gate electrode at a depth short of the first semiconductor layer is doped with atoms to be negatively charged in the second semiconductor layer.

Semiconductor device

A semiconductor device includes: a first semiconductor layer of p-type AlGaN (0&#x2266;x&#x2266;1); a second semiconductor layer of n-type AlGaN (0&#x3c;y&#x3c;1, x&#x3c;y) formed on the first semiconductor layer; a control electrode formed on the second semiconductor layer; a first main electrode connected to the first semiconductor layer and the second semiconductor layer; and a second main electrode connected to the second semiconductor layer. An interface between the first semiconductor layer and the second semiconductor layer has a surface orientation of (1-101) or (11-20).

A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of AlGaN (0&#x2266;X&#x2266;1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.

Nitride semiconductor device

Growing community of inventors

Kanagawa-ken, Japan

Yorito Kakiuchi