Samsung Electronics Co., Ltd.

Yooseung Jung

Seokyong Hong

Junyoung Kil

Jahyun Koo

Dahsom Kim

An image sensor device includes a first pixel located at a first row, a first select transistor, a second pixel located at a second row, a second select transistor, the second row being different from the first row, and a column line connected to both the first pixel and the second pixel, and during a first time period, a floating diffusion node of the first pixel is reset, and during a second time period, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor, the second time period is included in the first time period, and the first voltage is determined based on a voltage of a reset floating diffusion node of the second pixel.

Image sensor device and operation method thereof

Provided is an image sensor and an operation method of the image sensor. The image sensor includes a pixel array including a plurality of white pixels, a plurality of color pixels, and a plurality of auto focus (AF) pixels, a first shared pixel including the plurality of white pixels and the plurality of color pixels includes a first conversion gain transistor and a second conversion gain transistor configured to control a conversion gain of the first shared pixel, and a second shared pixel including some of the plurality of white pixels and the plurality of color pixels and at least one AF pixel includes a third conversion gain transistor and a fourth conversion gain transistor configured to control a conversion gain of the second shared pixel. The first conversion gain transistor, the second conversion gain transistor, the third conversion gain transistor, and the fourth conversion gain transistor are connected to different conversion gain control lines, respectively.

Growing community of inventors

Suwon-si, South Korea

Yooseung Jung