Samsung Electronics Co., Ltd.

Yoosang Hwang

Bong-Soo Kim

Keunnam Kim

Kiseok Lee

Hui-Jung Kim

Daeik Kim

Sunghee Han

Jemin Park

Hyeongsun Hong

Taejin Park

Jiyoung Kim

Junsoo Kim

Hyun-Woo Chung

Eunjung Kim

Sohyun Park

Sangyeon Han

Taehyun An

Semyeong Jang

Satoru Yamada

Dongoh Kim

Myeong-Dong Lee

Kyupil Lee

Sangho Lee

Dongsoo Woo

Gwanhyeob Koh

Youngbae Kim

Wooyoung Choi

Kyung-Eun Kim

Sungwoo Kim

Hyosub Kim

Chulkwon Park

Kijae Hur

Min Hee Cho

Yong Kwan Kim

Bongsoo Kim

JungWoo Seo

Yongchul Oh

Byoungdeog Choi

Ki-Hyung Nam

Hyungeun Choi

Inkyoung Heo

Kyujin Kim

Hongrae Kim

Sungkwan Choi

Chan-Sic Yoon

Wonsok Lee

Sungho Jang

Jimin Choi

Seokhan Park

Changhyun Cho

Hyeonok Jung

Euna Kim

Jin-Hwan Chun

Hunkook Lee

Dongryul Lee

Minseong Choi

Chansic Yoon

Jae-Hwan Cho

Jaehwan Cho

Dong-Wan Kim

Junwon Lee

Kang-Uk Kim

Jong-Ho Moon

Junghoon Han

Hyeon-Woo Jang

Seungjae Jung

Augustin Jinwoo Hong

Sang-Il Han

Jaehyoung Choi

Sooho Shin

Jinwoo Bae

Soojeong Kim

Hyo-Sub Kim

Yongkwan Kim

Hoin Lee

Joongchan Shin

Junghwan Oh

Nakjin Son

Eunju Cho

Kiwook Jung

Gyoyoung Jin

Junghwan Park

Dong Jin Lee

Dongsuk Shin

Seung-Heon Lee

Eun Ah Kim

Eun-Ji Kim

Sung-Min Park

Jiseok Hong

Huijung Kim

Jay-Bok Choi

Sung-Hwan Jang

Hyoungsub Kim

Young-Seung Cho

Hyeon-Kyu Lee

Youn-seok Choi

Hokyun An

Hyoungyol Mun

Jihye Hwang

Chan Min Lee

A semiconductor memory device including a substrate including an active pattern that includes a first source/drain region and a second source/drain region; an insulating layer on the substrate; a line structure on the insulating layer and extending in a first direction to cross the active pattern, the line structure penetrating the insulating layer on the first source/drain region and including a bit line electrically connected to the first source/drain region; and a contact spaced apart from the line structure and electrically connected to the second source/drain region, wherein the bit line includes a first portion vertically overlapped with the first source/drain region; and a second portion vertically overlapped with the insulating layer, and wherein a lowermost level of a top surface of the first portion of the bit line is at a level lower than a lowermost level of a top surface of the second portion of the bit line.

Semiconductor memory device

Semiconductor devices may include an active pattern, a gate structure in an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure on a lower portion of a sidewall of the bit line structure, and an upper spacer structure on an upper portion of the sidewall of the bit line structure. The lower spacer structure includes first and second lower spacers sequentially stacked, the first lower spacer contacts the lower portion of the sidewall of the bit line structure and does not include nitrogen, and the second lower spacer includes a material different from the first lower spacer. A portion of the upper spacer structure contacting the upper portion of the sidewall of the bit line structure includes a material different from the first lower spacer.

Semiconductor devices

Disclosed are a semiconductor memory device and a method of fabricating the same. The device includes a substrate including an active pattern with doped regions, a gate electrode crossing the active pattern between the doped regions, a bit line crossing the active pattern and being electrically connected to one of the doped regions, a spacer on a side surface of the bit line, a first contact coupled to another of the doped regions and spaced apart from the bit line with the spacer interposed therebetween, a landing pad on the first contact, and a data storing element on the landing pad. The another of the doped regions has a top surface, an upper side surface, and a curved top surface that extends from the top surface to the upper side surface. The first contact is in contact with the curved top surface and the upper side surface.

Method of fabricating semiconductor memory device having protruding contact portion

An integrated circuit device includes a substrate having an active region and a word line trench therein. The word line trench includes a lower portion having a first width, and an upper portion, which extends between the lower portion and a surface of the substrate and has a second width that is greater than the first width. A word line is provided, which extends in and adjacent a bottom of the word line trench. A gate insulation layer is provided, which extends between the word line and sidewalls of the lower portion of the word line trench. An electrically insulating gate capping layer is provided in the upper portion of the word line trench. An insulation liner is provided, which extends between the gate capping layer and sidewalls of the upper portion of the word line trench. The gate insulation layer extends between the insulation liner and a portion of the gate capping layer, which extends within the upper portion of the word line trench.

Method of forming an integrated circuit devices having buried word lines

A semiconductor device includes a substrate including a cell area having a first active region and a peripheral circuit area having a second active region, a direct contact contacting the first active region in the cell area, a bit line structure disposed on the direct contact, a capacitor structure electrically connected to the first active region, a gate structure disposed on the second active region in the peripheral circuit area, lower wiring layers disposed adjacent to the gate structure and electrically connected to the second active region, upper wiring layers disposed on the lower wiring layers, a wiring insulating layer disposed between the lower wiring layers and the upper wiring layers, and upper contact plugs connected to at least one of the lower wiring layers and the upper wiring layers and extending through the wiring insulating layer.

Semiconductor devices having contact plugs

Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.

Semiconductor devices and methods of forming semiconductor devices

A semiconductor memory device includes a stack including a plurality of layers vertically stacked on a substrate, each of the layers including a bit line extending in a first direction and a semiconductor pattern extending from the bit line in a second direction crossing the first direction, a gate electrode along each of the semiconductor patterns stacked, a vertical insulating layer on the gate electrode, a stopper layer, and a data storing element electrically connected to each of the semiconductor patterns. The data storing element includes a first electrode electrically connected to each of the semiconductor patterns, a second electrode on the first electrode, and a dielectric layer between the first and second electrodes. The stopper layer is between the vertical insulating layer and the second electrode.

The semiconductor device provided comprises a substrate that includes active regions that extends in a first direction and a device isolation layer that defines the active regions, word lines that run across the active regions in a second direction that intersects the first direction, bit-line structures that intersect the active regions and the word lines and that extend in a third direction that is perpendicular to the second direction, first contacts between the bit-line structures and the active regions, spacer structures on sidewalls of the bit-line structures, and second contacts that are between adjacent bit-line structures and are connected to the active regions. Each of the spacer structures extends from the sidewalls of the bit-line structures onto a sidewall of the device isolation layer.

Semiconductor devices having improved electrical characteristics and methods of fabricating the same

A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

Semiconductor and manufacturing method of the same

Integrated circuit devices having buried word lines therein

A semiconductor memory device includes a stack structure including a plurality of layers vertically stacked on a substrate. Each of the plurality of layers includes a first dielectric layer, a semiconductor layer, and a second dielectric layer that are sequentially stacked, and a first conductive line in the second dielectric layer and extending in a first direction. The device also includes a second conductive line extending vertically through the stack structure, and a capacitor in the stack structure and spaced apart from the second conductive line. The semiconductor layer includes semiconductor patterns extending in a second direction intersecting the first direction between the first conductive line and the substrate. The second conductive line is between a pair of the semiconductor patterns adjacent to each other in the first direction. An end of each of the semiconductor patterns is electrically connected to a first electrode of the capacitor.

Semiconductor memory devices

Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.

A semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate, bit line structures crossing over the word lines and extending in a second direction intersecting the first direction, and contact pad structures between the word lines and between the bit line structures in plan view. A spacer structure extends between the bit line structures and the contact pad structures. The spacer structure includes a first air gap extending in the second direction along sidewalls of the bit line structures and a second air gap surrounding each of the contact pad structures and coupled to the first air gap.

A semiconductor device includes a pair of line patterns disposed on a substrate. A contact plug is disposed between the pair of line patterns and an air gap is disposed between the contact plug and the line patterns. A landing pad extends from a top end of the contact plug to cover a first part of the air gap and an insulating layer is disposed on a second part of the air gap, which is not covered by the landing pad.

Methods of manufacturing semiconductor devices

Growing community of inventors

Suwon-si, South Korea

Yoosang Hwang