Samsung Electro-mechanics Co., Ltd.

Yoosam Na

Youngsik Hur

Wonsun Hwang

Byeonghak Jo

Jongmo Lim

Hyun Paek

Geunyong Lee

Suyeon Han

Seungchul Pyo

Jaehyouck Choi

A radio frequency (RF) switch is provided. The RF switch is configured to switch a RF signal input to a first terminal. The RF switch includes a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal, and a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal. The first distance is shorter than the second distance, and a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor.

Radio frequency switch

A radio frequency (RF) switch system, an RF switch protective circuit, and a protecting method thereof are provided. The RF switch system may include an RF switch and a protective circuit. The RF switch may be connected between a port that receives an RF signal and a ground. The protective circuit may detect a first voltage that is a voltage that is generated when the first RF switch is turned off, and may transmit an impedance value that is varied based on the first voltage to the port.

Radio frequency switch system, radio frequency switch protective circuit, and protecting method thereof

A power amplifier system includes: a base substrate; a driver stage configured to receive and amplify an RF input signal, wherein the driver stage is disposed within the base substrate and is implemented in a first substrate; and a power stage configured to receive the RF input signal amplified by the driver stage and amplify the RF input signal amplified by the driver stage, wherein the power stage is disposed outside the base substrate and is implemented in a second substrate independent from the first substrate.

Power amplifier system

A capacitor circuit includes a first capacitor bank and a second capacitor bank. The first capacitor bank includes p switch-capacitor circuits connected to each other in parallel, where p is a natural number of 2 or more, wherein at least two switch-capacitor circuits among the p switch-capacitor circuits have mutually different capacitance values based on a first weight. The second capacitor bank includes q switch-capacitor circuits connected to each other in parallel, where q is a natural number greater than p, wherein at least two of the q switch-capacitor circuits have mutually different capacitance values based on a second weight different from the first weight.

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Suwon-si, South Korea

Yoosam Na