Samsung Electronics Co., Ltd.

Agency for Defense Development

Yoonjae Kim

Yong-Hoon Son

Cheol Kyu Kim

Woojin Jung

Jin-Hyuk Yoo

Sungil Cho

Nam-Gun Kim

Sunghee Han

Sungho Jang

Sooho Shin

Taehyeong Kim

Hyuck Shin

Kul Inn

Donghyub Lee

Hyo-sun Min

Changwon Shul

Jaechang Ha

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.

Method of exposure using extreme ultraviolet and method of manufacturing a semiconductor device using the same

A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

Semiconductor device and method of manufacturing the same

Disclosed herein is a three-stage hydraulic actuator. The three-stage hydraulic actuator includes a pressurizing chamber, a distribution chamber and an acceleration chamber. The pressurizing chamber has therein separated spaces respectively charged with compressed gas and compressed oil. The distribution chamber is provided to communicate with the pressurizing chamber and is charged with oil pressurized by the compressed oil charged into the pressurizing chamber. The acceleration chamber communicates with the distribution chamber through a distributing orifice. An acceleration piston is installed in the acceleration chamber and is moved forward when the pressurized oil is supplied from the distribution chamber to the acceleration chamber.

Three-stage hydraulic actuator and method of operating the same

A method of fabricating a semiconductor device includes sequentially forming a first insulation pattern and an etch stop pattern on a peripheral circuit area of a substrate, forming a first mask pattern on a cell array area of the substrate, the first mask pattern including a pair of first portions extending in parallel and a second portion covering a portion of a sidewall of the etch stop pattern and a portion of a sidewall of the first insulation pattern, forming a second insulation layer covering the etch stop pattern and the first mask pattern, partially etching the etch stop pattern and the second insulation layer to expose the second portion of the first mask pattern, and removing the second portion of the first mask pattern to divide the pair of first portions of the first mask pattern.

Methods of fabricating semiconductor devices

A lower layer of a microelectronic device may be patterned by forming a first sacrificial layer on the lower layer; patterning a plurality of spaced apart trenches in the first sacrificial layer; forming a second sacrificial layer in the plurality of spaced apart trenches; patterning the second sacrificial layer in the plurality of spaced apart trenches to define upper openings in the plurality of spaced apart trenches; and patterning the lower layer using the first and second sacrificial layers as a mask to form lower openings in the lower layer.

Methods for patterning microelectronic devices using two sacrificial layers

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Seoul, South Korea

Yoonjae Kim