Samsung Display Co., Ltd.

Yoonho Khang

Myounggeun Cha

Youngki Shin

Myounghwa Kim

Joonhwa Bae

Jongchan Lee

Dongjo Kim

Seung-Hwan Cho

Sangho Park

Chong Sup Chang

Jungkyu Lee

Su-Hyoung Kang

Kyoungwon Lee

Woonghee Jeong

Sehwan Yu

Sun Hee Lee

Hyungjun Kim

Jong Chan Lee

Donghwan Shim

Keunwoo Kim

Shin Il Choi

Joohee Jeon

Sanggab Kim

Hyunjae Na

Jiseon Lee

Jongjun Baek

Changoh Jeong

Soyoung Koo

Meejae Kang

Hanbit Kim

Honglong Ning

Jaewook Kang

Jaeseob Lee

Jinho Hwang

Thanhtien Nguyen

Seohong Jung

A display device including: a first thin film transistor (TFT) including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a first channel region, a first source region, and a first drain region; a third TFT including a third semiconductor layer and a third gate electrode, the third semiconductor layer including a third channel region, a third source region, and a third drain region, wherein a leakage current of the third TFT in an off-state is less than a leakage current of the first TFT in an off-state; and a pixel electrode connected to one of the first source region and the first drain region, wherein the one of the first source region and the first drain region is connected to the third TFT.

Display device

An organic light emitting display device includes a semiconductor element, a lower electrode, a light emitting layer, an upper electrode, an anti-reflection layer, and a thin film encapsulation structure. The semiconductor element is disposed on a substrate. The lower electrode is disposed on the semiconductor element. The light emitting layer is disposed on the lower electrode. The upper electrode is disposed on the light emitting layer. The anti-reflection layer is disposed on the upper electrode. The thin film encapsulation structure is disposed on the anti-reflection layer.

Organic light emitting display device and method of manufacturing organic light emitting display device

A transistor including a polysilicon layer on a base substrate and including a channel region, a first ion doping region, a second ion doping region, the channel region being between the first and second ion doping regions, an average size of the grains in the channel region being greater than that of the grains in the first and second ion doping regions, a first gate electrode insulated from and overlapping the channel region, a second gate electrode insulated from the first gate electrode and overlapping the channel region, an inter-insulating layer on the second gate electrode, a source electrode on the inter-insulating layer and connected to the first ion doping region, and a drain electrode on the inter-insulating layer and connected to the second ion doping region.

Transistor, organic light emitting display having the same, and method of manufacturing organic light emitting display

A thin film transistor includes a polysilicon layer on a substrate, which includes a first area between second and third areas. A polysilicon layer is formed on the substrate, and a source electrode and a drain electrode are formed on the polysilicon layer in the first and third areas. Each of the source electrode and the drain electrode includes a metal silicide layer adjacent the polysilicon layer.

Method of manufacturing thin film transistor, and method of manufacturing display apparatus

Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentration on a substrate, a source-drain area disposed at opposite sides of the channel area and with a second doping concentration greater than the first doping concentration, and a substantially undoped area extending from the source-drain area. The substrate has a gate insulating layer on the semiconductor layer and a gate electrode disposed on the gate insulating layer and overlapping the channel area in at least some portions. The substrate has a source electrode and a drain electrode, each insulated from the gate electrode and electrically connected to the source-drain area. The gate electrode includes a first gate electrode layer and a second gate electrode layer, wherein the second gate electrode layer is thicker than the first gate electrode layer.

Thin film transistor array substrate having a gate electrode comprising two conductive layers

A method of manufacturing a thin film transistor substrate includes forming an amorphous silicon layer on a substrate, the substrate having a rectangular shape, and irradiating the amorphous silicon layer with a laser beam at a random pitch, such that the amorphous silicon layer is crystallizes into a polycrystalline silicon layer, wherein the laser beam has a major axis and a minor axis, the major axis being non-parallel with respect to sides of the substrate.

Method of manufacturing thin film transistor substrate, method of manufacturing display apparatus, thin film transistor substrate, and display apparatus

Thin film transistor substrate includes: a substrate; a crystalline silicon layer on the substrate; and a capping layer covering the crystalline silicon layer and including a first portion having a first thickness and a second portion having a second thickness that is greater than the first thickness.

Thin film transistor substrate, display apparatus including the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus

A display panel includes a base substrate including a pixel area and a peripheral area, a semiconductor layer disposed on a portion of the base substrate, a display element disposed in the pixel area, and a thin film transistor which controls the display element and includes an input electrode, an output electrode and a control electrode, in which the semiconductor layer includes a first portion disposed on the input electrode of the first thin film transistor, a second portion disposed on the output electrode of the first thin film transistor, and a third portion which connects the first portion and the second portion, overlaps the control electrode of the first thin film transistor, and defines a channel of the first thin film transistor.

Display panel

Thin film transistor, display apparatus comprising the same, method of manufacturing thin film transistor, and method of manufacturing display apparatus

A liquid crystal display includes a first substrate including a plurality of pixels, a second substrate facing the first substrate, and a liquid crystal layer interposed between the first substrate and the second substrate. At least one of the pixels includes a thin film transistor disposed on a first insulating substrate, an insulating layer overlapping the thin film transistor, and a pixel electrode disposed on the insulating layer. A contact hole is formed through the insulating layer to expose a first electrode of the thin film transistor, the pixel electrode is electrically connected to the first electrode through the contact hole, and the pixel electrode has a single-layer in an area where the contact hole is formed and a double-layer on the insulating layer.

Liquid crystal display and a method of manufacturing the same

A display apparatus includes a thin film transistor substrate, a substrate facing the thin film transistor substrate, and a liquid crystal layer. The thin film transistor substrate includes an insulating substrate, a gate electrode disposed on a surface of the insulating substrate, a gate insulating layer covering the gate electrode, a semiconductor layer disposed on the gate insulating layer, a source electrode disposed on the semiconductor layer, and a drain electrode disposed on the semiconductor layer and spaced apart from the source electrode. One of the source electrode and the drain electrode is spaced apart from the gate electrode in a plan view. The gate electrode includes a side surface inclined with respect to the surface of the insulating substrate and is partially overlapped with a portion of the source electrode or the drain electrode in a direction perpendicular to the side surface of the gate electrode.

Thin film transistor substrate, liquid crystal display having same, and method of manufacturing the same

A thin film transistor (TFT) substrate, a flat display apparatus including the TFT substrate, a method of manufacturing the TFT substrate, and a method of manufacturing the flat display apparatus, the thin film transistor (TFT) substrate including a substrate; a first gate electrode on the substrate, the first gate electrode including a first branch electrode and a second branch electrode that are spaced apart from one another; a polysilicon layer on the first gate electrode and insulated from the first gate electrode; and a second gate electrode on the polysilicon layer, the second gate electrode being insulated from the polysilicon layer and overlying the first and second branch electrodes.

Thin film transistor substrate, display apparatus comprising the same, method of manufacturing thin film transistor substrate, and method of manufacturing display apparatus

Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.

Semiconductor device, manufacturing method thereof, and display apparatus

A wire is provided on an insulating substrate to have a first thickness in a first area and a second thickness smaller than the first thickness in a second area except for the first area. A display apparatus includes the wire. The wire is formed by forming a first conductive layer and a second conductive layer on the insulating substrate and etching the first and second conductive layers using photoresist layer patterns having different thicknesses.

Wire, method of manufacture, and related apparatus

A thin film transistor includes a semiconductor layer disposed on a base substrate and including an oxide semiconductor material, a source electrode and a drain electrode, which respectively extend from opposing ends of the semiconductor layer, a plurality of low carrier concentration areas respectively disposed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer, a gate insulating layer disposed on the semiconductor layer, and a gate electrode disposed on the gate insulating layer.

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Yongin-si, South Korea

Yoonho Khang