Samsung Electronics Co., Ltd.

Yoongi Hong

Jieun Lee

Jiseok Hong

Seunguk Han

Hoju Song

Youngsin Kim

Sangho Yun

Sung-Jin Yeo

Dongkyun Lim

Gyuhyun Lee

Dongkwan Yang

Kijin Park

A semiconductor device includes a substrate including cell and core regions respectively having first and second active patterns having respective, opposing sidewall surfaces at least partially defining a trench therebetween, and a boundary region between the cell and core regions, a device isolation layer on the boundary region to fill the trench, a line structure on the first active pattern and extended from the cell region to the boundary region, and a capping pattern covering an end of the line structure on the boundary region. The device isolation layer includes one or more inner surfaces at least partially defining a recess region, which is adjacent to the end of the line structure, and the capping pattern is extended along the end of the line structure into the recess region. A top surface of the device isolation layer is between the line structure and a bottom surface of the capping pattern.

Semiconductor device and method of fabricating the same

A semiconductor device includes a gate structure on a substrate, first and second spacer structures on first and second sidewalls, respectively, opposite to each other of the gate structure, and first and second source/drain layers at upper portions of the substrate adjacent to the first and second sidewalls, respectively, of the gate structure. An upper surface of the gate structure has a height with reference to an upper surface of the substrate being a base level decreasing from a central portion to the first sidewall and substantially constant from the central portion to the second sidewall.

Semiconductor devices having a decreasing height gate structure

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Seoul, South Korea

Yoongi Hong