Cheil Industries Inc.

Samsung Sdi Co., Inc.

Cheil Industry, Inc.

Yoong-Hee Na

Taek-Soo Kwak

Han-Song Lee

Jin-Hee Bae

Hyun-Ji Song

Eun-Su Park

Seung-Hee Hong

Bo-Sun Kim

Hui-Chan Yun

Go-Un Kim

Byeong-Gyu Hwang

Wan-Hee Lim

Sang-Kyun Kim

Kwen-Woo Han

Sang-Hak Lim

Jin-Woo Seo

Mi-young Kim

Woo-Han Kim

Jun-Young Jang

Bong-Hwan Kim

Sae-Mi Park

Youn-Jin Cho

Il Yong Jung

Sang-Ran Koh

Eun-Seon Lee

Kun-Bae Noh

Jun Sakong

Jin-Gyo Kim

Jong-Dae Jeon

A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25&#xb0; C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Composition for forming a silica based layer, silica based layer, and electronic device

A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Composition for forming silica layer, silica layer, and electronic device

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

Disclosed is a composition for a silica-based insulation layer including hydrogenated polysilazane or hydrogenated polysiloxzane, wherein a concentration of a cyclic compound having a weight average molecular weight of less than 400 is less than or equal to 1,200 ppm. The composition for a silica-based insulation layer may reduce a thickness distribution during formation of a silica-based insulation layer, and thereby film defects after chemical mechanical polishing (CMP) during a semiconductor manufacturing process may be reduced.

Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer

A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1: 

Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer

A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2:(R)SiXSi(R)&#x2003;&#x2003;[Chemical Formula 1]R(Si)OR.&#x2003;&#x2003;[Chemical Formula 2]

A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1: 

Rinse liquid for insulating film and method of rinsing insulating film

A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent

Growing community of inventors

Suwon-si, South Korea

Yoong-Hee Na