Samsung Electronics Co., Ltd.

Yoonchul Cho

Daehyun Kim

Sangyeol Kang

Kongsoo Lee

Ken Tokashiki

Jun-Noh Lee

Badro Im

Dongkak Lee

Bonghyun Kim

Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

Methods for manufacturing a semiconductor device

Magnetic memory devices and methods of manufacturing the same are disclosed. A method may include forming a magnetic tunnel junction layer on a substrate, forming mask patterns on the magnetic tunnel junction layer, and sequentially performing a plurality of ion implantation processes using the mask patterns as ion implantation masks to form an isolation region in the magnetic tunnel junction layer. The isolation region may thereby define magnetic tunnel junction parts that are disposed under corresponding ones of the mask patterns. A magnetic memory device may include a plurality of magnetic tunnel junction parts electrically and magnetically isolated from each other through the isolation region.

Magnetic memory device and method of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Yoonchul Cho