Samsung Electronics Co., Ltd.

Je II Pharmaceutical Co., Ltd.

Je Il Pharmaceutical Co., Ltd.

Yoon Sun Park

Kyoung Lae Cho

Jun Jin Kong

Eric R Fossum

Jae Hong Kim

Seung-Hwan Song

Young Gu Jin

Heeseok Eun

Sung-Jae Byun

Donghun Yu

Jong Han Kim

Seok Lee

Jeong Min Kim

Seung Hoon Lee

Kyung Hoon Kim

Dong Hyuk Chae

Yong June Kim

Jung Chak Ahn

Se Young Jang

Sung Chung Park

Dong Jae Shin

Ho-Chul Ji

In Sung Joe

Young Hwan Lee

Kyoung Ho Ha

Ji Yoon Kim

Hyo Seok Na

Sung Dong Suh

Kyoung Won Na

Seong Gu Kim

Jong Yup Kim

Dong Hun Yu

Joseph Kim

Kyung Ha Koo

Jung Hun Sung

In Kuk Yun

Dae Kil Cha

Kyoung Sik Moon

Soo Jung Hwang

Jung Mee Lee

Ji Seon Park

Joon Woo Nam

Seung Hoon Kang

Hong Ki Moon

An electronic device according to various embodiments of the present invention can comprise: a housing including a first plate facing a first direction, a second plate facing a second direction opposite to the first direction, and a side member for encompassing a space between the first plate and the second plate; a circuit board arranged inside the housing and including at least one heating element; a first vapor chamber for receiving, through conduction, and dispersing, in at least a partial space between the first plate and the circuit board, heat released from the at least one heating element; a heat sink for receiving, through conduction, and absorbing, in at least a partial space between the circuit board and the second plate, heat released from the at least one heating element; and a fan for supplying air such that the heat absorbed by the heat sink is forcibly convected toward the outside of the electronic device. Additional various embodiments are possible.

Electronic device including radiation structure

The present disclosure relates to C-glycoside derivatives having a fused phenyl ring or pharmaceutical acceptable salts thereof, a method for preparing the same, a pharmaceutical composition comprising the same, a use thereof and a method for dual inhibition of SGLT1 and SGLT2 using the same. A novel compound of the present disclosure has a dual inhibitory activity against SGLT1 and SGLT2, thus being valuably used as a diabetes therapeutic agent.

C-glucoside derivative containing fused phenyl ring or pharmaceutically acceptable salt thereof, process for preparing same, and pharmaceutical composition comprising same

Provided is a memory module, a system using the memory module, and a method of fabricating the memory module. The memory module may include a printed circuit board and a memory package on the printed circuit board. The printed circuit board may include an embedded optical waveguide and a first optical window extending from the optical waveguide to a first surface of the printed circuit board. The memory package may also include a memory die having an optical input/output section and a second optical window. The optical input/output section, the second optical window, and the first optical window may be arranged in a line and the first optical window and the second optical window may be configured to at least one of transmit an optical signal from the optical waveguide to the optical input/output section and transmit an optical signal from the optical input/output section to the optical waveguide.

Memory module, memory system having the memory module, and method for manufacturing the memory module

An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.

Image sensor devices having dual-gated charge storage regions therein

An image sensor including a noise removing unit may sense images accurately by measuring the amount of noise generated when the image sensor does not perform a sensing operation, storing information about the measured noise amount in each pixel, and removing photocharge corresponding to the information about the measured noise amount during image sensing.

Image sensor including noise removing unit, image pickup device having the image sensor, and image sensing method performed in the image sensor

Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead.

Nonvolatile memory devices that utilize error correction estimates to increase reliability of error detection and correction operations

Provided are memory devices and memory programming methods. A memory device may include: a multi-level cell array that includes a plurality of multi-level cells; a programming unit that programs a first data page in the plurality of multi-level cells and programs a second data page in a multi-level cell from among the plurality of multi-level cells in which the first data page is programmed; an error analysis unit that analyzes read error information corresponding to the first data page based on a read voltage level to determine whether to correct a read error based on the analyzed read error information; and a controller that adjusts the read voltage level of the first data page depending on the determination result. Through this, it is possible to reduce an error occurrence when reading and/or programming a data page.

Memory device and memory programming method

A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.

Memory device and data reading method

Multi-bit programming apparatuses and/or methods are provided. A multi-bit programming apparatus may include: a first control unit that allocates any one of 2threshold voltage states to the N-bit data; a second control unit that spaces, by any one of a first interval and a second interval, adjacent threshold voltage states of the 2threshold voltage states; and a programming unit that programs the N-bit data by generating, in each of the at least one multi-bit cell, a distribution state corresponding to the allocated threshold voltage state. The multi-bit programming apparatus can reduce an error rate when reading data.

Apparatus and method of multi-bit programming

A memory device and a method of reading multi-bit data stored in a multi-bit cell array may be provided. The memory device may include a multi-bit cell array including a least one memory page with each memory page having a plurality of multi-bit cells, and a determination unit to divide the plurality of multi-bit cells into a first group and second group. The first group may include multi-bit cells with a threshold voltage higher than a reference voltage. The second group may include multi-bit cells with a threshold voltage lower than the reference voltage. The determination unit may sequentially update the first group and second group while changing the reference voltage.

Memory device and method of reading memory data

Growing community of inventors

Suwon-si, South Korea

Yoon Sun Park