Samsung Electronics Co., Ltd.

Yoon Sok Kang

Won Jae Joo

Kwang Hee Lee

Sang Kyun Lee

Jin Heong Yim

Won Joo Kim

Chul Hee Kim

A resistive memory device having a resistor part for controlling a switching window. The resistive memory device of this disclosure can control a switching window to assure operational reliability thereof. In addition, since the memory device is realized by additionally providing only the resistor part for controlling a switching window to various resistive memory devices, it can be easily fabricated and applied to all current and voltage driving type resistive devices.

Resistive memory device having resistor part for controlling switching window

A memory device including an organic material layer between an upper electrode and a lower electrode. The organic material layer includes a dendrimer containing at least one electron-donating group and at least one electron-accepting group. The disclosed memory device is advantageous in that it shows a nonvolatile property, has high integration density and low power consumption characteristics, and may be inexpensively fabricated through a simple process.

Memory device including dendrimer

A memory device of the current invention includes a memory layer having nanochannels sandwiched between an upper electrode and a lower electrode, in which the memory layer is made of an organic-inorganic complex for use in formation of nanopores, and has metal nanoparticles or metal ions fed into the nanopores. Therefore, the memory device has excellent processability, high reproducibility, and uniform performance.

Nonvolatile nanochannel memory device using organic-inorganic complex mesoporous material

A memory device, which includes a memory layer having quantum dots uniformly dispersed in organic material disposed between an upper electrode layer and a lower electrode layer. The memory device is advantageous because it is nonvolatile and inexpensive, and realizes high integration and high speed switching. Further, size and distribution of the quantum dots may be uniform, thus realizing uniform memory behavior. Furthermore, the memory device is suitable for application to portable electronic devices that must have low power consumption, due to low operating voltages thereof.

Memory device using quantum dots

A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two electrode layers and then reducing the ions of conductive nanoparticles into conductive nanoparticles in the organic material to form a desired memory layer. In addition, a nonvolatile organic memory device manufactured by the method of the current invention is also provided. The method allows the memory device to be manufactured using a rapid, simple, and environmentally friendly process, without the need for an encapsulation process. As well, the memory device has a low operating voltage, and hence, is suitable for application to various portable electronic devices that must have low power consumption.

Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same

A method of driving a multi-state organic memory device which includes an organic memory layer between upper and lower electrodes. The method comprises continuously applying voltages having different polarities to conduct switching into a low resistance state, and applying a single pulse to conduct switching into a high resistance state. A multi-state memory is realized using one memory device, since it is possible to gain three or more resistance states, thus significantly improving integration. The method has excellent reproducibility, and the resistance state induced by multiple pulses has an excellent nonvolatile characteristic.

Growing community of inventors

Seongnam-si, South Korea

Yoon Sok Kang