Semes Co., Ltd.

Yoon Ki Sa

Ji Hoon Jeong

Pil Kyun Heo

Hyun Yoon

Young Dae Chung

Do Yeon Kim

Tae Shin Kim

Jung Suk Goh

Kuk Saeng Kim

Young Je Um

Kwang Sup Kim

Jee Young Lee

Won Geun Kim

Ye Rim Yeon

Do Youn Lim

Yong Jun Seo

Jae Seong Lee

Byeong Geun Kim

Mong Ryong Lee

Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Method and apparatus for etching thin layer

A method of filling a via hole and an apparatus for performing the same are disclosed. The method includes providing a filling material having a fluidity on a via hole formed in the substrate, forming an electric field through the substrate to fill the via hole with the filling material, and solidifying the filling material in the via hole. The apparatus includes a stage for supporting the substrate, upper and lower electrodes for forming the electric field, and a power supply connected with the upper and lower electrodes.

Method of filling a via hole and apparatus for performing the same

Growing community of inventors

Seoul, South Korea

Yoon Ki Sa