Asm IP Holding B.v.

Yoon Ki Min

Yong Min Yoo

Tae Hee Yoo

Sun Ja Kim

Young Jae Kim

Wan Gyu Lim

Jong Wan Choi

Seung Ju Chun

Hae Jin Lee

Jong Hyun Ahn

Hak Joo Lee

Jeong Jun Woo

Provided are a substrate processing method and a device manufactured by using the same, which may improve etch selectivity of an insulating layer deposited on a stepped structure. The substrate processing method includes: forming a first layer on a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface; weakening at least a portion of the first layer; forming a second layer on the first layer; and performing an isotropic etching process on the first layer and the second layer.

Substrate processing method and device manufactured by using the same

Provided is a substrate processing method that may prevent the non-uniformity of the thickness of landing pads deposited on each step in a vertical NAND device having a stepped structure. The substrate processing method includes stacking, a plurality of times, a stack structure including an insulating layer and a sacrificial layer and etching the stack structure to form a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface. The method also includes forming a barrier layer on the stepped structure, forming a mask layer on the barrier layer and exposing at least a portion of the barrier layer by etching at least a portion of the mask layer with a first etching solution The method further includes etching the exposed barrier layer with a second etching solution and etching the mask layer with a third etching solution.

Substrate processing method and device manufactured by the same

Gas supply plate for semiconductor manufacturing apparatus

Provided is a substrate processing method that may prevent the non-uniformity of the thickness of landing pads deposited on each step in the process of selectively depositing a landing pad in a vertical NAND device having a stepped structure. The substrate processing method includes stacking, a plurality of times, a stack structure including an insulating layer and a sacrificial layer and etching the stack structure to form a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface. The method also includes forming a barrier layer on the stepped structure, forming a mask layer on the barrier layer and exposing at least a portion of the barrier layer by etching at least a portion of the mask layer with a first etching solution The method further includes etching the exposed barrier layer with a second etching solution and etching the mask layer with a third etching solution.

A method of processing a substrate by omitting a photolithographic process is disclosed. The method includes forming at least one layer on a stepped structure having an upper surface, a lower surface, and a side surface that connects the upper surface to the lower surface, selectively densifying portions of the at least one layer respectively on the upper surface and the lower surface via asymmetric plasma application, and performing an isotropic etching process on the at least one layer. During the isotropic etching process, the portion of the at least one layer formed on the upper surface is separated from the portion of the at least one layer formed on the lower surface.

Method of processing a substrate and a device manufactured by using the method

A substrate processing method includes stacking a plurality of stack structures each including an insulating layer and a sacrificial layer, on one another. The method also includes generating a stair structure by etching the stack structures and generating a separation layer on a side surface of the stair structure. The method further includes removing the sacrificial layer and generating conductive word line structures in spaces from which the sacrificial layer is removed. The separation layer is provided between the conductive word line structures.

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Seoul, South Korea

Yoon Ki Min