Lg Chem, Ltd

Korea Advanced Institute of Science and Technology

Sk Innovation Co., Ltd.

Yoon Hyung Hur

Sung Soo Yoon

Je Gwon Lee

No Jin Park

Eun Young Choi

Se Jin Ku

Mi Sook Lee

Hyung Ju Ryu

Eung Chang Lee

Na Na Kang

Sun Young Kim

Kwang Kuk Lee

Jin Su Ham

Yeon Sik Jung

Seung Won Song

A method for producing a polymer containing metal atoms or halogen atoms at the terminals thereof with excellent efficiency while minimizing or eliminating side reactions or the like is provided. The method can also freely control molecular weight characteristics of the polymer.

Method for producing polymer

The present application relates to a pinning composition, a laminate comprising the same, and a method for producing the same. The pinning composition of the present application can impart directionality and location selection properties to a polymer membrane comprising a self-assembly structure of a block copolymer. The pinning composition of the present application exhibits excellent reaction selectivity, whereby it can form a vertical lamella structure with a high degree of alignment. In addition, the pinning composition of the present application may be suitable for application to low temperature processes.

Random copolymer and pinning composition comprising the same

A neutral layer composition and a neutral layer formed from the same are disclosed herein. In some embodiments, a neutral layer composition includes a random copolymer having a unit represented by Formula 1, and a unit containing an aromatic structure having one or more halogen atoms, wherein the molar amount of the unit represented by Formula 1 is present in a range of 9 mol % to 32 mol %, based on the total molar amount of the copolymer. The neutral layer can effectively control orientation characteristics of various block copolymers deposited thereon.

Neutral layer composition

Methods for forming a laminate are provided. The method provides a highly aligned block copolymer without orientation defects, coordination number defects distance defects and the like on a substrate, thereby providing a laminate which can be effectively applied to the production of various patterned substrates, and a method for producing a patterned substrate using the same.

Polymer composition

A laminate and a method for producing a patterned substrate using the same are disclosed herein. In some embodiments, a laminate includes a substrate, and a stripe pattern having first and second polymer lines alternately and repeatedly disposed on the substrate, wherein the first polymer line comprises a first polymer having a first polymerized unit having a ring structure connected to a main chain and a second polymerized unit represented by Formula 1. The method may be applied to manufacture of devices, such as electronic devices, or of applications, such as integrated optical systems, guidance and detection patterns of magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads or organic light emitting diodes, and may be used to build a pattern on a surface used in manufacture of discrete track media, such as integrated circuits, bit-patterned media and/or magnetic storage devices such as hard drives.

Laminate

A neutral layer composition, which is capable of forming a neutral layer that can effectively control orientation characteristics of various block copolymers is provided.

Provided is a diblock copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2: 

Diblock copolymer containing fluorine group

Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2: 

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Daejeon, South Korea

Yoon Hyung Hur