Samsung Display Co., Ltd.

Snur & Db Foundation

Samsung Displayco., Ltd.

Yoon Ho Khang

Sang Ho Park

Se Hwan Yu

Chong Sup Chang

Hyun Jae Na

Yong Su Lee

Dong Jo Kim

Myoung Geun Cha

Dae Ho Kim

Yu-Gwang Jeong

Jae Neung Kim

Sang Gab Kim

Young Ki Shin

Jong Chan Lee

Jung Kyu Lee

Yong-Su Lee

Su-Hyoung Kang

Jin Goo Jung

Se Mi Kim

Dong-Hoon Lee

Do-Hyun Kim

Cheol Kyu Kim

Dong Hwan Shim

Sung Haeng Cho

Ji Seon Lee

Joo Hyung Lee

Woong Hee Jeong

Seung Hun Hong

Hyung Woo Lee

Seung-Hwan Cho

Se-Hwan Yu

So Young Koo

Sun Haeng Cho

Sung Hun Lee

Jae Jun Chae

Kahp Yang Suh

Hyoung Sick Um

Sang Gap Kim

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Thin film transistor and thin film transistor array panel including the same

An OLED display and a method of manufacturing thereof are disclosed. In one aspect, the display includes a scan line formed over a substrate and configured to transfer a scan signal, a data line and a driving voltage line crossing the scan line and respectively configured to transfer a data voltage and a driving voltage, and a switching transistor electrically connected to the scan line and the data line and including a switching drain electrode configured to output the data voltage. The display also includes a driving transistor including a driving gate electrode, a driving drain electrode, and a driving source electrode electrically connected to the switching drain electrode. The display further includes a storage capacitor including a first storage electrode electrically connected to the driving gate electrode and a second storage electrode formed on the same layer as the driving voltage line.

Organic light-emitting diode display including a storage capacitive plate and a driving voltage line formed on the same layer and manufacturing method thereof

Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same

Display device

A display device according to an exemplary embodiment of the present invention includes: a substrate; a plurality of transistors formed on the substrate; and a light-emitting device connected to the plurality of transistors, wherein the transistor includes a gate electrode, the plurality of transistors include a first transistor and a second transistor of which lateral wall slope angles of the gate electrode are different from each other, and the first transistor further includes a doping control member formed on a lateral wall of the gate electrode.

Display device and manufacturing method thereof

An organic light emitting diode display having a lightly doped region formed in a transistor for simplifying manufacturing process and reducing manufacturing costs is provided. The organic light emitting diode display includes: a substrate, a transistor on the substrate, and an organic light emitting diode (OLED) connected to the transistor, wherein the transistor includes a semiconductor member on the substrate, an insulating member on the semiconductor member, a source member and a drain member disposed on the semiconductor member and respectively disposed at opposite sides of the insulating member, and a gate electrode on the insulating member, wherein each of the source member and the drain member includes a plurality of layers having different impurity doping concentrations.

Organic light emitting diode display and manufacturing method thereof

A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Thin film transistor array panel and manufacturing method thereof

A touch screen panel includes a substrate, a plurality of touch electrodes in a touch area of the substrate, the touch electrodes sensing a touch, a connection line connected to a touch electrode of the plurality of touch electrodes, and a pad connected to one end of the connection line. The pad includes a first pad, a second pad on the first pad within a boundary line of the first pad, and a third pad covering a top surface and a side surface of the second pad.

Touch screen panel

A thin film transistor display panel according to an exemplary embodiment of the present invention includes a substrate, a first insulating layer formed on the substrate, a semiconductor layer formed on the first insulating layer, a second insulating layer formed on the semiconductor layer, and a gate electrode formed on the second insulating layer, in which the first insulating layer includes a light blocking material, and a thickness of the first insulating layer is greater than or equal to a thickness of the second insulating layer.

Thin film transistor display panel and method of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Yoon Ho Khang