Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Yoon-Ho Khang

Yong-Su Lee

Se-Hwan Yu

Dong-seok Suh

Myoung-Geun Cha

Su-Hyoung Kang

Jin-seo Noh

Hyun-Jae Na

Sang-mock Lee

Sang-ho Park

Min-Jung Lee

Dong-Jo Kim

Cheol-Kyu Kim

Dae-Ho Kim

Sang-Ho Park

Ki-joon Kim

Ji-Seon Lee

Jong-Chan Lee

Dong-Hwan Shim

Jung-hyun Lee

Joo-Hyun Lee

Mi-jeong Song

Eun-Hye Lee

Tae-Yon Lee

Ki-Joon Kim

Kyo-yeol Lee

Dong-Seok Suh

Vassili Leniachine

Chong-Sup Chang

Matthias Wuttig

Daniel Wamwangi

Jin-heong Yim

Hyang-Shik Kong

Sang-Gab Kim

Sun-ae Seo

Min Hyuck Kang

Myoung-jae Lee

Seung-eon Ahn

Han-gu Sohn

Tae-sang Park

Doo-Gon Kim

Jung-Kyu Lee

Sei-jin Kim

Yong-young Park

Woong-chul Shin

Woong-Hee Jeong

Youn-seon Kang

Jae-Neung Kim

Hui-kwon Seo

So-Young Koo

Deuk-Myung Ji

Young-Ki Shin

Myoung-Hwa Kim

Cheol-kyu Kim

Tae-yon Lee

Dae-won Ha

Wil-Liam Jo

Eun-hyu Lee

Seong-il Im

Anatoly V Dvurechenskiy

A thin film transistor (TFT), method of manufacturing the TFT and a flat panel display having the TFT are disclosed. In one aspect, the TFT comprises a substrate and an active layer formed over the substrate, wherein the active layer is formed of oxide semiconductor, and wherein the active layer includes two opposing sides. The TFT also comprises source and drain regions formed at the opposing sides of the active layer, a first insulating layer formed over the active layer, a gate electrode formed over the active layer, a second insulating layer formed covering the first insulation layer and the gate electrode, and a first conductive layer formed on the source and drain regions and contacting the second insulating layer.

Thin film transistor, method of manufacturing the thin film transistor and flat panel display having the thin film transistor

A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Thin film transistor substrate and method of manufacturing the same

A blind display device includes a plurality of curved display panels, a support, and a plurality of rotators. Each of the curved display panels includes a curved display area between a flat display area and a bezel area. The support guides movement of the curved display panels. The rotators couple corresponding ones of the curved display panels to the support and rotate corresponding ones of the curved display panels.

Blind display device

A thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer, a source electrode, a drain electrode and a graphene pattern. The semiconductor layer overlaps with the gate electrode. The gate insulating layer is disposed between the gate electrode and the semiconductor layer. The source electrode overlaps with the semiconductor layer. The drain electrode overlaps with the semiconductor layer. The drain electrode is spaced apart from the source electrode. The graphene pattern is disposed between the semiconductor layer and at least one of the source electrode and the drain electrode.

Thin film transistor and method of manufacturing the same

A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.

Thin-film transistor substrate and method of manufacturing the thin-film transistor substrate

Thin film transistor, method of manufacturing thin film transistor and flat panel display having the thin film transistor

A lenticular unit includes a transparent substrate; first electrodes being transparent and disposed on the substrate; a second electrode being transparent and elastic; and a transparent material layer interposed between the first and second electrodes and being deformable in a lens shape in a thickness direction depending on a potential applied between the first and second electrodes.

Lenticular unit for two-dimensional/three-dimensional auto-stereoscopic display

A thin film transistor includes a bottom gate electrode, a top gate electrode and an active pattern. The top gate electrode includes a transparent conductive material and overlaps with the bottom gate electrode. A boundary of the bottom gate electrode and a boundary of the top gate electrode are coincident with each other in a cross-sectional view. The active pattern includes a source portion, a drain portion and a channel portion disposed between the source portion and the drain portion. The channel portion overlaps with the bottom gate electrode and the top gate electrode.

Thin film transistor, display panel having the same and method of manufacturing the same

A thin film transistor (TFT) array substrate includes a substrate, a gate electrode, a gate line, a first data line, and a second data line on the substrate, a gate insulating layer that covers the gate electrode and the gate line and includes a first opening that exposes a portion of the first data line and a second opening that exposes a portion of the second data line, an active layer disposed on the gate insulating layer so that at least one portion of the active layer overlaps the gate electrode, a drain electrode and a source electrode that extend from opposite sides of the active layer, a pixel electrode that extends from the drain electrode, and a connection wiring that extends from the source electrode, and connects the first data line to the second data line through the first and second openings of the gate insulating layer.

Thin film transistor array substrate, method of manufacturing the same, and display apparatus including the same

A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness.

Thin film transistor display panel and method of manufacturing the same

A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.

Display substrate and method of manufacturing a display substrate

A display substrate includes a base substrate, a data line disposed on the base substrate, a gate line crossing the data line, a first insulation layer disposed on the base substrate, an active pattern disposed on the first insulation layer and comprising a channel comprising an oxide semiconductor, a source electrode connected to the channel, and a drain electrode connected to the channel, a second insulation layer disposed on the active pattern, and contacting to the source electrode and the drain electrode, a gate electrode disposed on the second insulation layer, and overlapping with the channel, a passivation layer disposed on the gate electrode and the second insulation layer, and a pixel electrode electrically connected to the drain electrode through a first contact hole formed through the passivation layer and the second insulation layer.

Display substrate and method of manufacturing the same

A display substrate includes a base substrate, a switching element, a gate line, a data line and a pixel electrode. Each of the gate line and the data line includes a first metal layer, and a second metal layer directly on the first metal layer. The switching element is on the base substrate, and includes a control electrode and an input electrode or an output electrode. The control electrode includes the first metal layer and excludes the second metal layer, and extends from the gate line. The input electrode or the output electrode includes a second metal layer and excludes the first metal layer. The input electrode extends from the data line. The pixel electrode is electrically connected to the output electrode of the switching element through a first contact hole, and includes a transparent conductive layer.

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Yongin-si, South Korea

Yoon-Ho Khang