Samsung Electronics Co., Ltd.

Yoon-Hee Choi

Sang-Wan Nam

Hee-Seon Park

Soo-Jung Kim

Sung-Min Lee

Deok-Hee Jeong

Jae-Sun Jung

Wu-Jong Kwon

Sae-Mi Jeong

Bong-Soon Lim

Sang-won Shim

Kang-Bin Lee

Il-Hwan Choi

Tae-Hyun Kim

Sang-Hyun Joo

Won-ho Ryu

You-Sang Lee

Sungyeon Lee

Sun-Min Yun

Dong-joon Hyun

Ji-Young Lee

Ki-Tae Park

Daeseok Byeon

Jin-Yub Lee

Yong-sung Kim

Bongsoon Lim

Jong Min Baek

Yeong-Kyeong Seong

Seok-Hyun Yoon

Bo-Geun Kim

Bong-Kil Jung

Sang-Wook Kang

Mu-Hui Park

Cheon An Lee

Chang-hwan Choi

Tae-ung Jung

Pan-Suk Kwak

Hae-dong Yeo

Bo Geun Kim

BoGeun Kim

Jiho Cho

Woo Chul Jung

Sang-wook Kang

Dong-Woo Im

Joon Young Kwak

Cathal Gurrin

Hyung-dong Lee

Ki Seok Park

Byunggil Jeon

Byung-jin Kim

Il-hwan Choi

Alan Francis Smeaton

Min Ki Jeon

Byung-Jin Kim

Won-Ho Ryu

Tae-Ung Jung

Hyo-Won Lee

Oh-Young Jang

A nonvolatile memory device including a memory cell array, a first voltage generator configured to generate a word line operating voltage for each word line of the memory cell array, a second voltage generator configured to generate a bit line operating voltage of the memory cell array, and a temperature unit configured to determine, from a temperature range table, a temperature range for a temperature code according to a real-time temperature of the memory cell array, and to adjust a power supply voltage of the first or second voltage generator based on a selection signal mapped to the determined temperature range.

Non-volatile memory device implementing temperature compensation features

A method for operating a content recognition apparatus is disclosed. The method for operating a content recognition apparatus according to an embodiment may comprise the steps of: obtaining at least one of a video fingerprint and an audio fingerprint of content corresponding to a content recognition request; retrieving, in a video fingerprint database and an audio fingerprint database for at least one broadcast service signal, a video fingerprint or an audio fingerprint which matches at least one of the obtained video fingerprint and audio fingerprint; and providing content information corresponding to the retrieved video fingerprint or audio fingerprint.

Content recognition apparatus and method for operating same

In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time. The program loop includes a programming step for programming selected memory cells among memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In programming the selected memory cells, a level of a voltage being applied to a common source line connected to the memory cells in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

Nonvolatile memory device and method of programming the same

Provided herein is a terminal device including a communication interface configured to receive a moving picture; a fingerprint extractor configured to extract a fingerprint from a frame of the moving picture; a controller configured to detect a target object from the frame, and control the communication interface to transmit the fingerprint to a server, and receive object information corresponding to the transmitted fingerprint from the server; and an outputter configured to output the received object information when content corresponding to the object information is output.

Terminal device and information providing method thereof

A memory device has a memory cell array with memory cells. A page buffer group generates page buffer signals according to a verify read result of the memory cells. A page buffer decoding unit generates a decoder output signal corresponding to the number of fail bits from the page buffer signals based on a first reference current. A slow bit counter outputs a count result corresponding to the number of fail bits from the decoder output signal based on a second reference current corresponding to M times the first reference current, where M is a positive integer. A pass/fail checking unit determines a program outcome with respect to the memory cells based on the count result and outputs a pass signal or a fail signal based on the determined program outcome.

Non-volatile memory device and memory system including the same

A method of operating a nonvolatile memory device is provided as follows. The nonvolatile memory device includes memory blocks each of which has word lines. A setup voltage is applied to the word lines. A word line voltage is applied to a first word line selected from the word lines. Recovery voltages are applied to the word lines. Each recovery voltage is applied to at least one corresponding word line of the word lines. The recovery voltages have different voltage levels from each other.

Operation method operating nonvolatile memory device having plurality of memory blocks

According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array, an address decoder, an input/output circuit, a voltage generation circuit, and control logic. The memory cell array includes a plurality of memory blocks on a substrate. Each of the memory blocks includes a plurality of strings connected between bit lines and a common source line. The address decoder is configured to measure impedance information of word lines of a selected memory block. The voltage generation circuit is configured to generate word line voltages to be applied to word lines, and at least one of the word line voltages includes an offset voltage and a target voltage. The control logic is configured to adjust a level of the offset voltage and the offset time depending on the measured impedance information of the word lines.

Nonvolatile memory device and wordline driving method thereof

In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency.

Display screen or portion thereof with graphical user interface

A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells.

Nonvolatile memory device and programming method thereof

An operating method of a memory system which includes a nonvolatile memory device including memory cells connected to a plurality of word lines, the operating method including pre-charging a selected one of the plurality of word lines; detecting a variation in a voltage or a current on the selected word line after the selected word line is floated; generating runtime failure information according to the detected variation; and determining a state of the selected word line or a state of a memory block including the selected word line, based on the runtime failure information.

Memory system and method of determining a failure in the memory system

Growing community of inventors

Hwaseong-si, South Korea

Yoon-Hee Choi