Postech Academy-Industry Foundation

Yoon Ha Jeong

Chang Ki Baek

Tai Uk Rim

Jeong Soo Lee

Ki Hyun Kim

Mun Woo Lee

Sang Ho Kam

Sung Ho Kim

Soo Young Park

Seong Wook Choi

Myung Dong Ko

Mun-Woo Lee

Yong-Sub Lee

Yong Sub Lee

Disclosed are a solar cell and a method for manufacturing the same. The solar cell comprises asymmetric nanowires each of which has an angled sidewall, and thus incident light can be concentrated at a p-n junction portion by means of a total reflection phenomenon of light caused by the difference between the refractive indices of a semiconductor layer and a transparent electrode layer, and light absorption may increase due to an increase in the light travel distance, thus improving photoelectric efficiency. Further, the method for manufacturing the solar cell involves etching a substrate and integrally forming the substrate and a p-type semiconductor layer including the asymmetric nanowires each of which has the angled sidewalls, thereby enabling reduced manufacturing costs and simple and easy manufacture of the nanowires having the angled sidewalls.

Solar cell and method for manufacturing same

The present invention provides a nanowire sensor comprising nanowires, in which the nanowires are stacked to form a three-dimensional structure so that they have a large exposed surface area compared to that of a conventional straight nanowire sensor in the same limited area, thereby increasing the probability of attachment of a target material to the nanowires to thereby increase the measurement sensitivity of the sensor. Thus, a change in the electrical conductivity (conductance or resistance) of the nanowires can be sensed with higher sensitivity, suggesting that the sensor has increased sensitivity.

Nanowire electric field effect sensor having three-dimensional stacking structure nanowire and manufacturing method therefor

A nanowire sensor having a nanowire in a network structure includes: source and drain electrodes formed over a substrate; a nanowire formed between the source and drain electrodes and having a network structure in which patterns of intersections are repeated; and a detection material fixed to the nanowire and selectively reacting with a target material introduced from outside.

Nanowire sensor having nanowire of network structure

A three-stage GaN HEMT Doherty power amplifier for high frequency applications includes: a carrier amplifier; first and second peaking amplifier; a 10-dB power divider configured to divide an input signal to the carrier amplifier and the first and second peaking amplifiers; a first path for controlling input power of the carrier amplifier; and a second path for maintaining an efficiency of 40% or more in an output range of 40 dBm to 50 dBm.

Three-stage GaN HEMT doherty power amplifier for high frequency applications

Disclosed is a 3-way Doherty power amplifier using a driving amplifier in which driving amplifiers are connected to the front stages of a carrier amplifier and a peaking amplifier, respectively, so as to obtain a high gain and a high efficiency. To this end, the Doherty power amplifier includes: a hybrid power distributor for distributing an input signal into first and second path units; and a driving amplifier for receiving a signal outputted from the hybrid power distributor and controlling the driving of a carrier amplifier, a first peaking amplifier, and a second peaking amplifier, wherein: the carrier amplifier, the first peaking amplifier, and the second peaking amplifier are connected to a rear stage of the driving amplifier, respectively; the first path unit generates a high efficiency at a low input power; and the second path unit maintains a high efficiency and gain in a high output range.

3-way Doherty power amplifier using driving amplifier

Provided is a distributed Doherty power amplifier exhibiting high efficiency and linearity at a wide range of bandwidths, the distributed Doherty power amplifier including a first amplifier; a second amplifier, which is connected to the first amplifier in parallel; a first shifting unit, which is interconnected between the input of the first amplifier and the input of the second amplifier and inverses the phase of the input of the second amplifier; and a second shifting unit, which is interconnected between the output of the first amplifier and the output of the second amplifier and inverses the phase of the output of the second amplifier, wherein the first amplifier and the second amplifier are Doherty power amplifiers, and each of the Doherty power amplifiers includes a carrier amplifier and a peaking amplifier, which are connected in parallel.

Growing community of inventors

Pohang-si, South Korea

Yoon Ha Jeong