Korea Institute of Science and Technology

Lg Semicon Co., Ltd.

Rnd Group LLC

Yoon H Kim

Yung Park

Hyo Tae Kim

Byeong Cheon Lee

Tae Seok Oh

Seung Ki Kim

Nam Kyu Kim

Jae-Dong Byun

Hee Bum Kang

Nam Hyuk Cho

In-Kyu Yoo

Young Ho Roh

Hae Keun Shin

Jae Ung Ko

Nam-Hee Cho

Dong K Lim

Jae K Park

Chang Bong Lee

Tae Sung Oh

The present invention relates to a mascara brush. The present invention provides a mascara brush, wherein a single brush rod of the mascara brush is formed with both an application brush part with an application portion for applying a mascara liquid to eyelashes and an arrangement brush part with a comb for arranging the eyelashes in order to simultaneously perform the application of the mascara liquid and arrangement of the eyelashes, thereby conveniently imparting the effects of clean, long lash and curling to the eyelashes through a single process, the structure of the mascara brush is simplified so that a manufacturing process can be relatively simplified, and stability in use can be obtained due to the securely coupled state.

Mascara brush

A coding circuit of the present invention converts n-bit binary data word at a prescribed clock cycle (t) into to an m-trit ternary code word, where n and m are integers and n.gtoreq.m. The coding circuit includes an (x) number of storage elements or latches and a (y) number of coders, each storage element or latch receiving (m.div.x) bits of the binary data word at a clock cycle of (t.div.x). After a prescribed delay period, a corresponding storage element or latch outputs the sampled bits to a corresponding coder at an increasing or decreasing edge of the clock signal. Each coder codes the sampled bits to (m.div.y) ternary code. The each of the coders outputs (m.div.y) ternary code onto a corresponding signal line of a bus. Hence, the coding circuit outputs m-trit ternary code word onto the bus. An exemplary coding circuit is illustrated where n=8, m=6, t=25 MHz, x=2 and y=2, and D flip-flops are used for the storage elements and latches.

(N) bit (M) ternary coding circuit

A low-temperature sinterable dielectric composition with a high dielectric constant wherein x=2-4 mol %, y=0.5-3.0 mol % and z=3-5 mol % in [95PMN-5PT]-x(PbO)-y(CaO)-z(CuO).

Method of manufacturing a multi-layered ceramic capacitor

A low-temperature sintering temperature compensating microwave dielectric ceramic composition includes ZnTiO.sub.3 stoichiometrically combined with ZnO and TiO.sub.3, wherein Zn.sup.2+ of the ZnTiO.sub.3 is replaced with Mg.sup.2+ to produce (Zn.sub.1-X Mg.sub.X)TiO.sub.3 (X=0.02.about.0.5). The composite has a fine structure and improved dielectric property without a sintering agent.

Low-temperature sinterable temperature compensating microwave dielectric

An improved high frequency dielectric ceramic composition and a fabrication method thereof, which is sintered at a low temperature ranging from 900.degree. to 1250.degree. C. without using a sintering aid and which has a fine structure and excellent dielectric characteristics, which includes of TiO.sub.2 .multidot.x(ZnO) where 0.04.ltoreq.x.ltoreq.1.0.

High frequency dielectric ceramic composition and fabrication method

A low-temperature sinterable dielectric composition with a high dielectric constant is disclosed wherein x=2-4 mol %, y=0.5-3.0 mol % and z=3-5 mol % in �95PMN-5PT!-x(PbO)-y(CaO)-z(CuO).

Low-temperature sinterable dielectric composition with high dielectric

A dielectric ceramic composition having an empirical formula represented by (Sr.sub.l-2x Bi.sub.x Ti.sub.l-y W.sub.y)O.sub.3 wherein x is in a range of 0.0005 to 0.003 and y is in a range of 0.0015 to 0.009 for boundary layer condensers and a method for preparing the same which are comprising the steps of: mixing Bi.sub.2 O.sub.3 -WO.sub.3 frit powder with main component having an empirical formula represented by Sr.sub.l-2x Ti.sub.l-y O.sub.3 wherein x is in a range of 0.0005 to 0.003 and y is in a range of 0.0015 to 0.009, in a wet manner, the Bi.sub.2 O.sub.3 frit serving as a reducing agent; drying the resulting mixture; sintering the dried mixture at a temperature of 1,400 to 1,470.degree. C under a reducing atmosphere; and applying secondary thermal treatment to the sintered body at 1,250.degree. C are disclosed.

Dielectric ceramic composition for boundary layer condensers and a

An improved dielectric ceramic composition for high frequencies and a method for preparation of the same, capable of being advantageously used for a dielectric resonator, a material of a substrate for an integrated circuit and the like in high frequency regions, which consists of a main component of ZrO.sub.2, TiO.sub.2, and SnO.sub.2 and a sintering aid component of ZnO, NiO, Nb.sub.2 O.sub.5, and Mn(NO.sub.3).sub.2 4H.sub.2. The main component consists of 38 to 58 wt % of ZrO.sub.2, 22 to 43 wt % of TiO.sub.2, and 9 to 26 wt % of SnO.sub.2. And the sintering aid component consists of, with respect to the total amount of the main component, less than 7 wt % of ZnO, less than 10 wt % of NiO, less than 7 wt % of Nb.sub.2 O.sub.5, and less than 4 wt %, of Mn(NO.sub.3).sub.2 4H.sub.2 O, calculated on the basis of the weight ratio of MnO.sub.2.

Dielectric ceramic composition for high frequencies and method for

An improvd dielectric ceramic composition for high frequencies and a method for preparation of the same, capable of being advantageously used for a substrate of dielectric resonator, glabal positioning system and the like in high frequency regions, which consists of a main component of Zr.sub.1-X Sn.sub.X Ti.sub.1+Y O.sub.4 and sintering aid component of MnO.sub.2, NiO and Sb.sub.2 O.sub.3, wherein the molar ratio X and Y are respectively, 0.1.ltoreq.X.ltoreq.0.3 and -0.1.ltoreq.Y.ltoreq.0.1 and the sintering aid component essentially consists of, based on the total amount of the main component, 3% or less of MnO.sub.2 and 2 wt % or less of NiO and Sb.sub.2 O.sub.3 in a combined amount.

A dielectric ceramic composition for high frequencies and a method of preparation of such composition is described. The dielectric ceramic composition essentially consists of ZrO.sub.2, TiO.sub.2 and SnO.sub.2, represented by the following empirical formula: Zr.sub.1-x Sn.sub.x TiO.sub.4, wherein x is in a range of 0.1 to 0.4.

A composition for an intergranular insulation type semiconductive ceramic capacitor essentially consisting of 1 mole of SrTiO.sub.3, 0.005 mole to 0.012 mole of TiO.sub.2, and 0.003 mole to 0.006 mole of a quinquevalent ion oxide selected from a group consisting of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Sb.sub.2 O.sub.5 and the mixture thereof. An intergranular insulation type semiconductive ceramic capacitor is made by sintering a ceramic body made of the composition at a temperature of not less than 1,500.degree. C. in the atmosphere, to form a sintered body having a liquid phase at its grain boundaries, and cooling the sintered body so that the liquid phase forms an intergranular insulating layer. The intergranular insulation type semiconductive ceramic capacitor exhibits a dielectric constant of not less than 40,000 and an insulation resistance of not less than 10.sup.9 .OMEGA..

Composition and method for making an intergranular insulation type

A low loss dielectric ceramic composition is disclosed, which is usable in a microwave filter and global positioning that is superior in quality coefficient (Q) value, temperature characteristics of resonant frequency, and long-term reliability, such as high temperature resistance and humidity resistance. The composition comprises Zr.sub.1-x Sn.sub.x Ti.sub.1+y O.sub.4 as a main group in combination with aZnO+bSb.sub.2 O.sub.3, as sintering-aiding agents, wherein x and y are mole ratios which satisfy the following conditions: 0.1&lt;x&lt;0.3; 0&lt;y&lt;0.5; and a and b indicate weight ratios to the total weight of the main group, satisfied by the following condition: 0&lt;a+b&lt;0.05 wherein neither a nor b is zero.

Microwave dielectric ceramic composition

An intercrystalline semiconductive ceramic capacitor having a dielectric ceramic body formed by sintering a dielectric ceramic having a composition essentially consisting of a major component comprised of 1 mole SrTiO.sub.3 and a minor component comprised of 0.01 to 0.04 mole TiO.sub.2, 0.001 to 0.010 mole Dy.sub.2 O.sub.3, 0.001 to 0.007 mole ZnO, 0.002 to 0.012 mole MnO.sub.2 and 0.01 to 0.07 mole Al.sub.2 O.sub.3 at a temperature of 1,400.degree. to 1,470.degree. C. in a reducing atmosphere, an intercrystalline insulation layer formed by coating an insulation paste over both surfaces of the dielectric ceramic body and heat treating the resultant body, and external electrodes formed on the both surface of the dielectric ceramic body, respectively.

Intercrystalline semiconductive ceramic capacitor

A light-transmissive alumina ceramic composition and a method for preparing the same are disclosed. The light-transmissive polycrystalline alumina ceramics composition comprises of 100 w/o of aluminum oxide having a purity of not less than 99.99%, approximately 0.03 to approximately 0.1 w/o of magnesium compound and approximately 0.002 to approximately 0.07 w/o of zirconium compound. The method is comprised of the steps of: molding mixture powder consisting of 100 w/o of aluminum oxide powder having a purity of not less than 99.99% added with from approximately 0.03 to approximately 0.1 w/o of magnesium oxide powder and from approximately 0.002 to approximately 0.07 w/o of zirconium oxide powder to obtain a molded substance; calcining said molded substance under the atmosphere to give a calcined substance having a strength suitable to processing; grinding the surface of said calcined substance smoothly; and sintering the resulting substance in a hydrogen atmosphere or a vacuum. The light-transmissive polycrystalline ceramics composition is preventive of the reflection and scattering of light. With the method for producing light-transmissive polycrystalline ceramics, the workability and the production yield are improved.

Light-transmissive polycrystalline alumina ceramics

A method for manufacturing multi-layer ceramic capacitors wherein the internal electrodes are formed by introducing molten metallic material into the void layers of a ceramic dielectric body. The method comprises of applying and baking paste of silver or platinum/silver on the opposite end surfaces of ceramic dielectric body to form first external electrodes and introducing molten metallic material into void layers through injection openings which are in communication with the void layers and open at side surfaces of the ceramic dielectric body to form internal electrodes. The ceramic dielectric body can be filled with molten metal for relative short time and under low pressure as compared with a prior art ceramic dielectric body having porous penetrable barriers.

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Seoul, South Korea

Yoon H Kim