Samsung Electronics Co., Ltd.

Yoon-Goo Kang

Kong-Soo Lee

Jae-Jong Han

Seong-Hoon Jeong

Han-jin Lim

Won-Seok Yoo

Ho-Kyun An

A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection.

Semiconductor devices having blocking layers and methods of forming the same

Semiconductor devices, and methods of manufacturing the same, include a field region in a semiconductor substrate to define an active region. An interlayer insulating layer is on the semiconductor substrate. A semiconductor pattern is within a hole vertically extending through the interlayer insulating layer. The semiconductor pattern is in contact with the active region. A barrier region is between the semiconductor pattern and the interlayer insulating layer. The barrier region includes a first buffer dielectric material and a barrier dielectric material. The first buffer dielectric material is between the barrier dielectric material and the semiconductor pattern, and the barrier dielectric material is spaced apart from both the semiconductor pattern and the active region.

Semiconductor devices having a vertical diode and methods of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Yoon-Goo Kang