Samsung Electronics Co., Ltd.

National Institute for Materials Science

Yoon Chul Son

Doh Won Jung

Youngjin Cho

Chan Kwak

Kyoung-Seok Moon

Kimoon Lee

Jae-young Choi

Woojin Lee

Se Yun Kim

Hyun Sik Kim

Sungwoo Hwang

Hyeon Cheol Park

Sung Woo Hwang

Sang Mock Lee

Hee Jung Park

Sang Il Kim

Jongmin Lee

Daejin Yang

Kwang Hee Kim

Hyosug Lee

Byungki Ryu

Takayoshi Sasaki

Jong Wook Roh

Yun Sung Woo

Minoru Osada

Yong Hee Cho

Yong-Hee Cho

Sang Ii Kim

Jae-Young Choi

Sang iL Kim

A method of manufacturing a ceramic electronic component includes forming a dielectric layer including a plurality of ceramic nanosheets on a first electrode, treating the dielectric layer with an acid, and forming a second electrode on the dielectric layer, a ceramic electronic component, and an electronic device.

Ceramic electronic component and method of manufacturing the same and electronic device

Disclosed are a dielectric material, a multi-layered capacitor, and an electronic device including the same. The dielectric material includes a dielectric material particle represented by ADO, wherein A includes Sr, Ba, Ca, Pb, K, Na, or a combination thereof, D includes Ti, Zr, Mg, Nb, Ta, or a combination thereof, the dielectric material particle includes about 2.5 moles to about 4 moles of the donor element, based on 100 moles of D, and a diameter of the dielectric material particle is in a range of from about 100 nanometers to about 300 nanometers.

Dielectric material, multi-layered capacitors and electronic devices comprising the same

A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.

Dielectric composites, and multi-layered capacitors and electronic devices comprising thereof

A transparent conductor including a Group 5 transition metal and boron, wherein the compound has a layered structure.

Transparent conductor and electronic device including the same

An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structureMeCh&#x2003;&#x2003;Chemical Formula 1

Electrically conductive thin films

An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure:MTe&#x2003;&#x2003;Chemical Formula 1

According to example embodiments, a transparent electrically conductive film including a compound that has a two-dimensional electron gas layer, and has a product of an absorption coefficient (&#x3b1;) for light having a wavelength of about 550 nm at 25&#xb0; C. and a resistivity value (&#x3c1;) thereof of less than or equal to about 30 &#x3a9;/sq is provided. The electrically conductive film may be a layered crystal structure of the compound.

An electrically conductive thin film including a plurality of nanosheets including a doped titanium oxide represented by Chemical Formula 1 and having a layered crystal structure:(ATi)O&#x2003;&#x2003;Chemical Formula 1wherein, in Chemical Formula 1, &#x3b4; is greater than 0, A is at least one dopant metal selected from Nb, Ta, V, W, Cr, and Mo, and &#x3b1; is greater than 0 and less than 1. Also, an electronic device including the electrically conductive thin film.

An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure,MeA&#x2003;&#x2003;Chemical Formula 1wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and

A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.

Conductive material and electrical device including the same

An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structureReC&#x2003;&#x2003;Chemical Formula 1wherein Re is a lanthanide. Also an electronic device including the electrically conductive thin film.

Electrically conductive thin films containing Re2C

A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof.

Transparent conductive thin film

An electrical conductor includes a first conductive layer including a plurality of metal oxide nanosheets, wherein a metal oxide nanosheet of the plurality of metal oxide nanosheets includes a proton bonded to a the surface of the metal oxide nanosheet,

Electrical conductors, production methods thereof, and electronic devices including the same

Disclosed are a composite transparent electrode, a production method thereof, and an electronic device including the same, wherein the composite transparent electrode includes a metal nitride thin film including at least one of indium (In), titanium (Ti), zinc (Zn), zirconium (Zr), and gallium (Ga), and a metal oxide thin film including at least one of indium (In), zinc (Zn), tin (Sn), and titanium (Ti), the metal oxide thin film being formed on one surface or opposite surfaces of the metal nitride thin film.

Composite transparent electrodes

A hafnium telluride compound includes a layered crystal structure and represented by the following Chemical Formula 1.HfTeA&#x2003;&#x2003;[Chemical Formula 1] Herein, A is at least one selected from phosphorus (P), Arsenic (As), antimony (Sb), bismuth (Bi), sulfur (S) and selenium (Se), and 0&#x3c;x&#x2266;1.

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Hwaseong-si, South Korea

Yoon Chul Son