Hyundai Autron Company Ltd.

Yoon Chul Choi

Hyuk Woo

Young Joon Kim

Tae Young Park

Han Sin Cho

Tae Youp Kim

Provided are a semiconductor device, the semiconductor device comprise, a substrate which comprises a first surface and a second surface facing the first surface, an epitaxial layer which is formed on the first surface of the substrate and has a first conductivity type, a base region which is formed in the epitaxial layer and has a second conductivity type different from the first conductivity type, a source region which is formed in the base region and has the first conductivity type, a channel region which is formed in the base region to bc separated from the source region and has the first conductivity type and a barrier region which is formed between the source region and the channel region and has the second conductivity type.

Growing community of inventors

Seongnam-si, South Korea

Yoon Chul Choi