Samsung Electronics Co., Ltd.

Dongjin Semichem Co., Ltd.

Yool Kang

Sang-jun Choi

Hyung-rae Lee

Sang-Gyun Woo

Cha-Won Koh

Sang-Jun Choi

Seong-woon Choi

Sang-gyun Woo

Seok-hwan Oh

Joo-tae Moon

So-Ra Han

Chun-Geun Park

Dong-Won Jung

Hyoung-hee Kim

Hyun-woo Kim

Jung-hyeon Lee

Jai-Hyuk Song

Byung-Hong Chung

Young-bum Koh

Seok-Hwan Oh

Hyun Kyu Park

Jeong-lim Nam

Jeong-hee Chung

Shi-yong Yi

Suk-joo Lee

Seung Hyun Lee

Dong-won Kim

Dong-jun Lee

Keita Kato

Chul-Ho Kim

Tae-hoon Kim

Hyun-Jin Kim

Gi-Sung Yeo

Yun-seok Choi

Han-Ku Cho

Yun Seok Choi

Ji-young Lee

Jae-ho Kim

Atsushi Nakamura

Doo-youl Lee

Chang-jin Kang

Si-hyeung Lee

Suk-Joo Lee

Boo-deuk Kim

Jung-Youl Lee

Sung-Chan Park

Seokhwan Oh

Ju-Young Kim

Kyung-Lyul Moon

Hai-sub Na

Takahiro Yasue

Seong-Ho Moon

Jin-A Ryu

Seongwoon Choi

Si-Young Lee

Subramanya Mayya

Ye-hwan Kim

Jin-young Yoon

Man-Ho Han

Tae-Hoi Park

Kyoung-taek Kim

Seung Yun Yang

Seong-Ji Kwon

Seongho Moon

Jaesung Kang

Jae-ok Yoo

Hye-ji Kim

Yu-Jin Jeoung

Su-min Park

Jinphil Choi

Kyoung Sil Park

Suk-Koo Hong

Kyoung-sil Park

Kyung-hwan Yoon

Hak-won Kim

Weoun-ju Kim

Yi Seul Kim

HyoungHee Kim

A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns on the substrate; and applying a liquid material to remove an upper portion of the mask material solution layer, wherein the mask material solution layer includes a fluorine additive concentrated at the upper portion of the mask material solution layer.

Method of forming mask pattern and method of fabricating semiconductor device using the same

A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

Methods of forming patterns using compositions for an underlayer of photoresist

A method of forming patterns for a semiconductor device includes preparing a hardmask composition including a carbon allotrope, a spin-on hardmask (SOH) material, an aromatic ring-containing polymer, and a solvent, applying the hardmask composition to an etching target layer, forming a hardmask by heat-treating the applied hardmask composition, forming a photoresist pattern on the hardmask, forming a hardmask pattern by etching the hardmask using the photoresist pattern as an etching mask, and forming an etched pattern by etching the etching target layer using the hardmask pattern as an etching mask.

Method of forming patterns for semiconductor device

A manufacturing method of a semiconductor device includes forming a hard mask layer on a semiconductor substrate using a hard mask composition. Hard mask patterns are formed by patterning the hard mask layer. Semiconductor patterns are formed by etching the semiconductor substrate using the hard mask patterns. The hard mask composition includes a plurality of first carbon nanotubes (CNTs) having a first length, a plurality of second CNTs having a second length, which is at least 3 times the first length, and a dispersing agent in which the first CNTs and the second CNTs are dispersed. The total mass of the first CNTs is 1 to 2.5 times the total mass of the second CNTs.

Hard mask composition, carbon nanotube layer structure, pattern forming method, and manufacturing method of semiconductor device

Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.

Method of forming patterns and method of manufacturing integrated circuit device

A method of forming a pattern of a semiconductor device includes providing a substrate, forming a photoresist layer by coating a resist composition including an acid generator and a first resin, the first resin having an acid-labile group, exposing the photoresist layer, forming a photoresist pattern by negatively developing the photoresist layer using a developing solution including an organic solvent, coating a capping composition including a second resin and the organic solvent on the substrate having the photoresist pattern formed thereon, and attaching a capping layer on upper and side surfaces of the photoresist pattern, by baking the capping composition and developing the capping composition using the developing solution including the organic solvent.

Method of forming pattern of semiconductor device

A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches.

Method of fabricating semiconductor device

A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate. A capping film including an acid source is formed on the exposed surface areas of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain after removing the acid diffused regions of the second mask layer.

Method of forming fine patterns of semiconductor device by using double patterning process which uses acid diffusion

Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer.

Methods of forming photoresist patterns

A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.

Method of manufacturing semiconductor device using acid diffusion

A photoacid generator represented by Formula 1 or Formula 2: wherein R, R, and Rare each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S, and at least one CHgroup in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R&#x2014;SA, where Ris a C1-C10 alkyl group, and Ais a counter-ion.

Photoacid generator, chemically amplified resist composition including the same, and associated methods

A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate so as to be separated from one another. A capping film including an acid source is formed on sidewalls and an upper surface of each of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain in the first spaces after removing the acid diffused regions of the second mask layer.

A method of forming fine patterns of a semiconductor device is provided. The method includes forming plural preliminary first mask patterns, which are spaced apart from each other by a first distance in a direction parallel to a surface of a substrate, on the substrate; forming an acid solution layer on the substrate to cover the plural preliminary first mask patterns; forming plural first mask patterns which are spaced apart from each other by a second distance larger than the first distance, of which upper and side portions are surrounded by acid diffusion regions having first solubility; exposing the first acid diffusion regions by removing the acid solution layer; forming a second mask layer having second solubility lower than the first solubility in spaces between the acid diffusion regions; and forming plural second mask patterns located between the plural first mask patterns, respectively, by removing the acid diffusion regions by the dissolvent.

Methods of forming fine patterns of semiconductor device

A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.

Method of forming a mask pattern, method of forming a minute pattern, and method of manufacturing a semiconductor device using the same

A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

Method of forming fine patterns of a semiconductor device

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Yongin-si, South Korea

Yool Kang