Seiko Epson Corporation

Hrl Laboratories, LLC

Rutgers, the State University of New Jersey

US Government As Represented by the Secretary of the Army

Yook-Kong Yong

Randall Lynn Kubena

Ji Wang

Tsutomu Imai

John R Vig

Deborah J Kirby

Jiun-Der Yu

Masako Tanaka

Mihir S Patel

David T Chang

Arthur D Ballato

Walter S Wall

Richard J Joyce

Shigeo Kanna

A resonator includes a piezoelectric layer comprising a piezoelectric material, the piezoelectric layer having a first surface and a second surface; an inner electrode disposed on the first surface of the piezoelectric layer, the inner electrode connected to a circuit; and an outer electrode surrounding the inner electrode on the first surface of the piezoelectric layer, the outer electrode left floating or connected to ground. The inner electrode and the outer electrode are separated by at least one gap smaller than an acoustic wavelength. One single piece electrode or multiple piece electrodes may be disposed on the second surface of the piezoelectric layer. The outer electrodes are configured for optimal modal confinement of an acoustic resonance while the inner electrodes are configured to produce a higher motional resistance than the interconnect resistance for maintaining high Q.

Piezoelectric resonator with multiple electrode sections

A RF field sensor in which a magnetostrictive film is deposited on one or more electrodes of one or more quartz resonator(s) in which an electric field of the RF field is detected along one axis of the RF field sensor and a magnetic field of the RF field is detected along an orthogonal axis of the RF field sensor simultaneously.

Dual magnetic and electric field quartz sensor

A resonator assembly includes a semiconductor substrate; a resonator gyroscope, the resonator gyroscope including a first resonator formed in a layer of a first material; and an oscillator on the semiconductor substrate, the oscillator including a second resonator formed of a second material. The second resonator is disposed in a cavity, the cavity comprising a first recess in the layer of a first material with the edges of the first recess being attached to the substrate, or the cavity comprising a second recess in the substrate and the edges of the second recess being attached to the layer of a first material.

Quartz resonator with plasma etched tethers for stress isolation from the mounting contacts

A low phase noise dual mode resonator and a method of making and using said resonator is disclosed. The dual mode resonator is capable of sustaining two frequency vibration modes simultaneously. The two frequency vibration modes are capable of exhibit non-linear coupling when one is driven at a higher voltage than the other. The dual mode resonator is configured such that the ratio of the two vibration frequency modes is a value that maximizes the non-linear coupling effect. As a result of the non-linear effect, the phase noise on the mode that is not overdriven is reduced.

Methods for noise reduction and quality factor improvement in resonators

In an embodiment, a piezoelectric resonator configured for parametric amplification is disclosed. The piezoelectric resonator may include or comprise a piezoelectric member, and first and second resonator electrodes associated with the piezoelectric member and positioned to enable a first electric field to be generated in a first direction. The piezoelectric resonator may also include or comprise a parametric drive electrode associated with the piezoelectric member and positioned to enable a second electric field to be generated in a second direction.

Piezoelectric resonator with capacitive sense and/or force rebalance electrodes to control an amplitude of vibration

The present invention is a piezoelectric crystal oscillator using parametric amplification to enhance the Q. Parametric amplification is accomplished by driving the same region of the crystal as used for the oscillator with an overtone of the crystal resonator.

Parametrically driven quartz UHF oscillator

A quartz crystal resonator includes a quartz crystal resonator element having a main surface including an X axis (electrical axis) and a Z' axis of an inclination rotated at an angle (y) equal to or greater than 36.4 degrees and equal to or smaller than, 40.5 degrees from a Z axis (optical axis) around the X axis, a main vibrating portion vibrating at a predetermined resonance frequency (f) and a supporting portion integrally formed with the main vibrating portion in such a manner as to be formed peripherally to surround the main vibrating portion, and two covers having a thermal expansion coefficient equal to or greater than 6&#xd7;10per degrees centigrade and equal to or smaller than 10&#xd7;10per degrees centigrade and bonded to the supporting portion so as to sandwich the quartz crystal resonator element therebetween.

Quartz crystal resonator

An angular velocity sensor includes a protrusion protruding in a Y'-axis direction and extending in an X-axis direction on a main surface of a rotated Y cut quartz plate, and an excitation electrode and a detection electrode formed on the main surface adjacent to this protrusion. This excitation electrode excites thickness-shear vibration in the X-axis direction on the quartz substrate, exiting vibration on the protrusion. Then, the protrusion is bent and displaced due to Coriolis force acting in a direction orthogonal to the vibration of the protrusion corresponding to a rotation around an Y&#x2032; axis. This displacement at the protrusion is applied to the quartz substrate as stress. The detection electrode detects change of this stress, thereby angular speed added to the angular velocity sensor is detected.

Piezoelectric vibration angular velocity sensor

Double-sided, single-sided and ring electrode mesa resonators are provided that operate in the difficult 3 GHZ frequency with an electrode-free resonator area that serves as an energy-trapping area. The double-sided electrode-free resonator device is a double-sided mesa resonator plate, top and bottom wells, a mesa, and top and bottom electrodes deposited in such a way that the electrodes cover the plate surface and surround the mesa, which allows the mesa to protrude above the electrodes and provide an electrode-free resonator area. The top and bottom electrodes, which are acoustically coupled and controlled by acoustic gaps, create an electro-magnetic field and an excitation voltage within a vibrating area of the resonator plate generates an acoustic energy which is trapped within the resonator area and confined to the resonator area to minimize a leakage of the acoustic energy and provide a high Q factor at 3 GHz. The resonator has a resonator frequency determined by a resonator thickness dimension, t, influences the resonator area's ability to function as an active element trapping the acoustic energy. The inventors herein have observed a strong relationship between decreased resonator thickness and motional impedance. Double-sided and single-sided filter devices based on the same principles are also provided.

Electrode-free resonator structures for frequency control, filters and sensors

An apparatus and method for determining certain correction factors in analyzing the vibration frequency characteristics of an electroded crystal plate. The developed correction factors are introduced to correct the inaccuracies of third-order thickness-shear cut-off frequencies. The analysis is preferably carried out during the design of a piezoelectric device incorporating the electroded crystal plate before production of the device.

Determination of vibration frequency characteristics of electroded crystal plate

Techniques are provided for determining certain correction factors and using these correction factors in analyzing the vibration frequency characteristics of a piezoelectric material. The correction factors are developed based on the Mindlin plate theory and are introduced to correct the inaccuracies of higher-order thickness-shear cut-off frequencies. The analysis is preferably carried out during the design of a piezoelectric device incorporating the piezoelectric material and before production of the piezoelectric device. The design state may also include determining whether the device and its electrodes exhibit appropriate stiffness characteristics.

Correction factors for the analysis of piezoelectric devices

A method for verifying the design of piezoelectric devices includes expressing attributes of such piezoelectric device or subsystem thereof in terms of an elastic property or properties of a different subsystem or device component of the piezoelectric device. Such piezoelectric device may include a layer of piezoelectric material and one or more electrodes affixed to one or more faces of such layer. Computational complexity of models of the design are reduced by modeling displacement of the electrodes as being equal to displacement of the layer of piezoelectric material during operation of such piezoelectric device. Further reduction in computational complexity is achieved by modeling electrode displacement as being uniform within each electrode. Stress in the piezoelectric device or subsystem thereof is expressed in terms of elastic properties of a different subsystem of the piezoelectric device. Further any express dependence on strain in a subsystem or device component of the piezoelectric device may be eliminated to reduce model complexity. Higher order terms of such models can be ignored in many instances for further reduction in computational complexity.

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Princeton, NJ, United States of America

Yook-Kong Yong