Samsung Electronics Co., Ltd.

YooJung Lee

Jaehun Seo

Myeong-Cheol Kim

Cheol Kyu Kim

Siyoung Choi

Kisoo Chang

Field effect transistors including a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode may be provided. A top surface of the substrate may include a plurality of grooves (e.g., a plurality of convex portions and a plurality of concave portions). Further, a device isolation layer may be provided to expose upper portions of the plurality of fin portions and to cover top surfaces of the plurality of grooves.

Growing community of inventors

Yongin-si, South Korea

YooJung Lee