Samsung Electronics Co., Ltd.

Yoochul Kong

Kihyun Hwang

Hanmei Choi

Chanjin Park

Dongchul Yoo

Junkyu Yang

Gyungjin Min

Seongsoo Lee

Jinkwan Lee

Provided is a three dimensional semiconductor device. The device may include mold layers vertically and sequentially stacked, a conductive pattern between the stacked mold layers, a plugging pattern vertically penetrating the stacked mold layers, an intermediate pattern between the conductive pattern and the plugging pattern, and protective layer patterns between the mold layers and the plugging pattern, wherein the protective layer patterns are separated by the intermediate pattern.

Three dimensional semiconductor memory device and method of manufacturing the same

Provided are methods of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, forming a mask layer on the mold layer, etching the mold layer using the mask layer as an etch mask to form a channel hole penetrating the mold layer, shrinking the mask layer to provide a reduced mask layer, forming a spacer layer to cover the reduced mask layer, and forming a vertical channel to fill the channel hole and be electrically connected to the substrate. As a result, the channel hole can have an enlarged entrance.

Methods of fabricating semiconductor devices using mask shrinking

Growing community of inventors

Seoul, South Korea

Yoochul Kong