Samsung Electronics Co., Ltd.

Yoo-Seok Jang

Seung-Jun Lee

Yu-sin Yang

Chung-sam Jun

Sang-kil Lee

Min-Kook Kim

Young-Jee Yoon

Hak-yong Kim

Chang-hun Park

Bang-Won Kim

Seung-Yong Doh

An apparatus and method of forming an epitaxial layer are provided. The apparatus includes a process chamber in which an epitaxial process is performed to form epitaxial layer on a substrate. A first supplier supplies source gases for the epitaxial layer into the process chamber. A second supplier supplies dopants into the process chamber. A detector detects a composition ratio of the epitaxial layer and a concentration of the dopants in the epitaxial layer during the epitaxial growth process. And a controller controls a mass flow of at least one of the source gases and a mass flow of the dopants in-line with the epitaxial growth process. Accordingly, the layer thickness of the epitaxial layer can be accurately controlled in real time in line with the epitaxial process.

Apparatus for forming a thin layer and method of forming a thin layer on a substrate using the same

A method of compensating sensor data and a method of evaluating an interlock of an interlock system, in which an allowable variation between sensors varying depending on a driving time for a set of equipment, an RF time, the number of wafers, etc. is minimized, thereby enhancing detection reliability of a defective wafer.

Method of compensating sensor data and evaluating an interlock of an interlock system

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Seoul, South Korea

Yoo-Seok Jang