Cheil Industries Inc.

Samsung Sdi Co., Inc.

Yoo-Jeong Choi

Yun-Jun Kim

Chung-Heon Lee

Hyun-Ji Song

Yu-Shin Park

Young-Min Kim

Youn-Jin Cho

Hyo-Young Kwon

Yong-Woon Yoon

Hea-Jung Kim

Joon-Young Moon

You-Jung Park

Hwan-Sung Cheon

Seung-Wook Shin

Min-Soo Kim

Tae-ho Kim

Youn-Hee Nam

Seung-Hee Hong

Jee-Yun Song

Go-Un Kim

Seung-Bae Oh

Yo-Choul Park

Mi-young Kim

Sang-Kyun Kim

Dong-Geun Lee

Ran Namgung

Bum-Jin Lee

Dominea Rathwell

Seulgi Jeong

Sung-Wook Cho

Seung-Hyun Kim

Soo-Hyoun Mun

Hyeon-Il Jung

Yu-Mi Heo

Byeri Yoon

Sun-Hae Kang

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A monomer, an organic layer composition including the monomer, an organic layer, and a method of forming patterns, the monomer being represented by Chemical Formula 1: 

Monomer, organic layer composition, organic layer, and method of forming patterns

An organic layer composition, an organic layer, and associated methods, the composition including a polymer that includes a moiety represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, and a solvent, 

Organic layer composition, organic layer, and method of forming patterns

A hardmask composition includes a polymer including a moiety represented by the following Chemical Formula 1 and a solvent.*-A-B&#x2014;*&#x2003;&#x2003;[Chemical Formula 1] In the Chemical Formula 1, A and B are the same as defined in the detailed description.

Hardmask composition and method of forming patterns using the hardmask composition

A polymer includes a structural unit represented by Chemical Formula 1 and an organic layer composition including the same. wherein in Chemical Formula 1, A is a carbon cyclic group including at least one hetero atom, B is one of groups in Group 1, where Arto Ar, Rto R, L and m are as defined in the specification and * is a linking point. When the carbon cyclic group includes at least two hetero atoms when the carbon cyclic group includes a pentagon cyclic moiety and the pentagon cyclic moiety includes a nitrogen atom (N) as a hetero atom, and the at least two hetero atoms are the same or different: 

Polymer, organic layer composition, organic layer, and method of forming patterns

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A', L and n are the same as in the detailed description.

Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the same. In the above Chemical Formula 1, A, A', L, L&#x2032;, X and n are the same as defined in the specification.

Monomer for hardmask composition, hardmask composition including said monomer, and method for forming pattern using said hardmask composition

A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent, 

Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.  In the above Chemical Formula 1, Ato A, Xto X, L, L, n and m are the same as described in the detailed description.

Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition

A hardmask composition and a method of forming patterns, the composition including a solvent; and a polymer including a moiety represented by the following Chemical Formula 1, 

Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.

Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition

A hard mask composition includes a solvent and an aromatic ring-containing compound represented by the following Chemical Formula 1: 

Hardmask composition including aromatic ring-containing compound, method of forming patterns, and semiconductor integrated circuit device including the patterns

A hardmask composition includes a monomer represented by the following Chemical Formula 1 and an aromatic ring-containing polymer, 

Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns

A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and a compound, the compound including a structural unit represented by the following Chemical Formula 1: 

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Suwon-si, South Korea

Yoo-Jeong Choi