Chengdu Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Yongyi Fu

Donghua Jiang

Kang Luo

Chenliang Liu

Rujian Li

Feng Bai

Fei Fei Li

Hao Jing

Jianbo Yang

Chiehhsing Chung

Xuewei Wang

Wuyang Zhao

Byung Chun Lee

Yong Zhou

Chao Tan

Yin Xie

Yongzhou Ling

Nan Du

Sa Liu

Guowei Su

Chundong Li

Kechao Song

Dongwoo Kang

Zhengping Xu

Suoping Peng

Kaihao Chen

Saijun Sun

Hexiong Li

Provided are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a display region and at least one hole region located in the display region, the hole region includes a function hole and a partition region surrounding the function hole, the partition region is provided with at least one partition dam surrounding the function hole; the partition dam includes a first partition layer disposed on a base substrate and a second partition layer disposed on a side of the first partition layer away from the base substrate, at least one partition layer includes a second sub-layer and a third sub-layer disposed on a side of the second sub-layer away from the base substrate, the third sub-layer has a protrusion with respect to a sidewall of the second sub-layer, and the protrusion and the sidewall of the second sub-layer form an inwardly recessed structure.

Display substrate and preparation method thereof, and display apparatus each including partition region provides with at least one partition dam surrounding function hole

The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

Ion implantation amount adjustment device and method, ion implantation apparatus and determination method

A bearing device and an ion implantation device are provided. The bearing device includes a bearing table configured to bear a substrate, and a plurality of supporting components configured to support the substrate, each supporting component is movably arranged on the bearing table, to support the substrate at an adjustable position.

Bearing device and ion implantation device

The present invention discloses a via-hole etching method related to semiconductor manufacturing field, and the method overcomes the defects of an uncontrollable end point of a via-hole and an unfavorable profile-angle in a conventional via-hole etching method. The via-hole etching method includes: forming a structure for via-hole etching, includes: a low-temperature poly-silicon layer, a gate insulating layer, a gate metal layer and an interlayer insulating layer, which are sequentially formed on a substrate; forming a mask layer comprising a via-hole masking pattern on the structure for via-hole etching; by using a first etching process, etching the structure for via-hole etching to a first thickness of the gate insulating layer; by using a second etching process, etching the structure for via-hole etching to etch away the remaining thickness of the gate insulating layer, and uncovering the low-temperature poly-silicon layer; removing the mask layer to form a via-hole structure.

Via-hole etching method

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Beijing, China

Yongyi Fu