Yangtze Memory Technologies Co., Ltd.

Yongyan Xu

Zongliang Huo

Hongtao Liu

Lei Jin

Ming Wang

Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a 3D memory device includes a NAND memory string and a peripheral circuit. The NAND memory string extends vertically above a substrate and includes a plurality of memory cells arranged vertically in series. The peripheral circuit is configured to program the memory cells based on incremental step pulse programming (ISPP). Different verification voltages of the ISPP are applied to at least two of the memory cells.

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Wuhan, China

Yongyan Xu