Hangzhou Silan Integrated Circuit Co., Ltd.

Hangzhou Silan Microelectronics Co., Ltd.

Hangzhou Silan Integrated Circuits Co., Ltd.

Yongxiang Wen

Chen Liu

Feng Ji

Shaohua Zhang

Yulei Jiang

Yanghui Sun

Guoqiang Yu

Liwen Li

Wei Sun

XiaoLi Zhang

Fuhe Sun

Junshan Ge

Wenchao Jin

Zhijian Ma

Wenliang Sun

A MEMS device and a manufacturing method thereof. The manufacturing method comprises: forming a CMOS circuit; and forming a MEMS module on the CMOS circuit which is coupling to the MEMS module and configured to drive the MEMS module. Forming the MEMS module comprises: forming a protective layer; forming a sacrificial layer in the protective layer; forming a first electrode on the protective layer and on the sacrificial layer so that the first electrode covers the sacrificial layer, and electrically coupling the first electrode to the CMOS circuit; forming a piezoelectric layer on the first electrode and above the sacrificial layer; forming a second electrode on the piezoelectric layer and electrically coupling the second electrode to the CMOS circuit; forming a through hole to reach the sacrificial layer; and forming a cavity by removing the sacrificial layer through the through hole.

MEMS device and manufacturing method thereof

A MEMS microphone and a manufacturing method thereof. The method comprises: sequentially forming a first isolation layer, a diaphragm, and a second isolation layer on a substrate; sequentially forming a first protective layer, a backplate electrode, and a second protective layer on the second isolation layer; forming a release hole penetrating through the first protective layer, the backplate electrode, and the second protective layer; forming an acoustic cavity penetrating through the substrate; releasing the diaphragm through the acoustic cavity and the release hole; and forming a groove on a surface of the first isolation layer, wherein the diaphragm conformally covers the surface of the first isolation layer, thereby forming a spring structure at a position of the groove.

MEMS microphone and manufacturing method thereof

Disclosed a MEMS assembly and a manufacturing method thereof. The manufacturing method comprises: forming a groove on a sensor chip; forming a bonding pad on a circuit chip; bonding the sensor chip and the circuit chip together to form a bonding assembly; performing a first dicing process at a first position of the sensor chip to penetrate through the sensor chip to the groove; performing a second dicing process at a second position of the sensor chip to penetrate through the sensor chip and the circuit chip, for obtaining an individual MEMS assembly by singulating the bonding assembly, wherein location of the groove corresponds to a position of the bonding pad, and an opening is formed in the sensor chip to expose the bonding pad when the second dicing process is performed. The method uses two dicing process respectively achieving different depths to expose the bonding pad of the sensor chip and singulate the MEMS assembly, respectively, to improve yield and reliability.

MEMS assembly and manufacturing method thereof

The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process. Further, with a minimum thickness of the field oxide layer, the parasitical threshold voltage between the aluminum wiring and the silicon surface of the high-voltage device can be higher than 1200V, thereby improving the planarization of oxide layer steps on the silicon surface in the whole high-voltage BCD process, and enhancing the reliability of the product.

Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process

A multiple silicon trenches forming method and an etching mask structure, the method comprises: step S, providing a MEMS sealing cap silicon substrate (); step S, forming n stacked mask layers () on the MEMS sealing cap silicon substrate (), after forming each mask layer, photolithographing and etching the mask layer and all other mask layers beneath the same to form a plurality of etching windows (D, D, D); step S, etching the MEMS sealing cap silicon substrate by using the current uppermost mask layer and a layer of mask material beneath the same as a mask; step S, removing the current uppermost mask layer; step S, repeating the step Sand the step Suntil all the n mask layers are removed. The present invention can form a plurality of deep trenches with high aspect ratio on the MEMS sealing cap silicon substrate using conventional semiconductor processes, avoiding the problem that the conventional spin coating cannot be conducted on a sealing cap wafer with deep trenches using photoresist.

Multiple silicon trenches forming method for MEMS sealing cap wafer and etching mask structure thereof

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Hangzhou, China

Yongxiang Wen