Applied Materials, Inc.

Toshiba Corporation

Yongxiang He

Hong Peng Wang

Clifford Stow

Yang Wang

Brian T West

Ronald Vern Schauer

Kenneth Tsai

Edwin Charles Weldon

Xinyu Zhang

Jesus G Garcia, Iii

Daniel M Deyo

Jim Junshi Wang

Dongseok Kang

Hui Zheng

Siva Lanka

A VCSEL array and the method of manufacturing the array are disclosed. The VCSEL array comprises a substrate and a plurality of VCSEL structures formed on the substrate in a regular pattern. A customized metal layer is deposited to electrically connect a selected number but not all of the plurality of VCSEL structures. The selected number of VCSEL structures form an array of a predetermined irregular pattern.

Vertical cavity surface emitting laser (VCSEL) array and manufacturing method

The present invention discloses a VCSEL array that can function in at least two different operational modes. In one operational mode, the VCSEL array functions as a regular-patterned array; and in the other operational mode, the VCSEL array functions as an irregular-patterned array. Thus, the same VCSEL chip may be used as an illumination light source or a structural light method light source for 3D sensing, depending on the selected operational mode.

The present invention discloses a VCSEL array that is divided into at least a first and a second area. The first area covers the center of the array and is surrounded by the second area. The first area would experience higher temperature than the second area after the VCSELs in both areas are turned on for a given time period. VCSELs in the first area are electrically connected to a first metal layer portion. VCSELs in the second area are electrically connected to a second metal layer portion. The first and second metal layer portions are electrically insulated from each other.

System and method for preventing thermal induced failures in vertical cavity surface emitting laser (VCSEL) array

A P-N junction gate high electron mobility transistor (HEMT) device with a self-aligned gate structure and a method for making the HEMT device is disclosed. In one embodiment, the HEMT device includes a heterojunction comprising a barrier layer formed on a channel layer. A gate layer is formed on the barrier layer, the gate layer comprising a P-type group III-V semiconductor material suitable for depleting the carriers of a current conducting channel at the heterojunction when the HEMT device is off. A gate electrode comprising indium tin oxide (ITO) is formed on the gate layer, the gate electrode and the gate layer having substantially the same length.

Self-aligned ITO gate electrode for GaN HEMT device

Disclosed herein is a non-contact package useful when an article to be stored or shipped in the package includes a sensitive surface, the performance of which will be detrimentally affected if the sensitive surface is contacted with a nominal amount of mechanical force. A fluid environment which does not produce sufficient mechanical force to detrimentally affect the sensitive surface may be used in contact with the sensitive surface to prevent an undesirable chemical reaction on the sensitive surface. A fluid environment may also be used inside the package to support surrounding walls of the package so that such walls do not contact the sensitive surface and/or to dissipate force applied to the exterior of the package so that the sensitive surface will not be damaged. The more advantageous embodiments of the non-contact packaging not only protect sensitive surfaces of articles within the packaging during storage and shipping of the package, but also reduce the possibility that sensitive surfaces of the article will be damaged by contact with the packaging material during removal of the article from the package.

Non-contact protective packaging for surface-sensitive articles

A guard for an electrostatic chuck includes a ceramic annulus that has an inner surface shaped to fit around a circumference of the electrostatic chuck, and an outer surface having (i) a top portion with a recessed trench and (ii) a side portion. A metal coating is provided on the top portion of the outer surface.

Guard for electrostatic chuck

In a method of cleaning and refurbishing a process chamber component having a metal coating having a surface thereon, the surface of the metal coating is immersed in an acidic solution to remove at least a portion of the process deposits from the surface. Thereafter, the surface of the metal coating is immersed in a basic solution to remove substantially all the metal coating. The component may optionally be bead blasting to roughen a surface of the component, and the metal coating may be re-formed.

Method of cleaning a coated process chamber component

Disclosed herein is a method of roughening a ceramic surface by forming mechanical interlocks in the ceramic surface by a chemical etching process, a thermal etching process, or a laser micromachining process. Also disclosed herein are components for use in semiconductor processing chambers (in particular, a deposition ring for use in a PVD chamber) which have at least one ceramic surface having mechanical interlocks formed therein by chemical etching, thermal etching, or laser micromachining. Ceramic surfaces which have been roughened according to the chemical etching, thermal etching, or laser micromachining process of the invention are less brittle and damaged than ceramic surfaces which are roughened using conventional grit blasting techniques. The method of the invention results in a roughened ceramic surface which provides good adherence to an overlying sacrificial layer (such as aluminum).

Reusable ceramic-comprising component which includes a scrificial surface layer

A method of fabricating a process chamber component that has a ceramic form with grains and grain boundary regions. In the method, the component is bead blasted to provide a surface having a relatively low roughness average of less than about 150 microinches. The component is dipped into a solution having a concentration that is sufficiently low to reduce etching of grain boundary regions of the ceramic form. A metal coating is formed over at least a portion of the ceramic form. The component fabricated by this method can tolerate thicker deposits of sputtered material in a sputtering process without the sputtered deposit accumulates causing spalling of the coating of the component.

Growing community of inventors

Sunnyvale, CA, United States of America

Yongxiang He