Tosoh Smd, Inc.

Yongwen Yuan

Eugene Y Ivanov

Weifang Miao

Phil Frausto

Yang Liu

David B Smathers

Ronald G Jordan

A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal.

Silicon sputtering target with special surface treatment and good particle performance and methods of making the same

Described is a design and method for producing a sputtering target assembly with low deflection made from target material solder bonded to composite backing plate with coefficient of thermal expansion (CTE) matching the target material. The composite backing plate is composite configuration composed of at least two different materials with different CTE. The composite backing plate, after plastic deformation, if necessary, has a CTE matching the target material and low and desirable deflection in the bonding process, and therefore, resulting in a low deflection and low stress target material bonded to composite backing plate assembly. The method includes manufacturing composite backing plate with a flat bond surface, heat treating of target blank and composite backing plate to achieve desirable shape of bond surfaces, solder bonding target to a backing plate, and slowly cooling the assembly to room temperature. Matching CTE in both target material and backing plate eliminates the problem of CTE mismatch and prevents the assembly from deflection and internal stress.

Low deflection sputtering target assembly and methods of making same

A sputtering target made of aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm by weight, which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target.

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Dublin, OH, United States of America

Yongwen Yuan