Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Other

Yongwei Wu

Bo He

Pei Jiang

Chiayu Lee

Miao Duan

Chunche Hsu

Yongming Yin

Shujhih Chen

The present application provides a quantum dot ink and a display terminal. Components of the quantum dot ink include a low-molecular-weight silicon polymer which includes three organosilicon group directly connected to a nitrogen atom and each independently containing a silicon-oxygen bond as a skeleton and containing an amide or ester branched chain, such that the interaction of multiple hydrogen bonds in the low-molecular-weight silicon polymer is used to enhance the adhesion of the quantum dot ink after curing into a film, and meanwhile, the film is provided with self-repair properties.

Quantum dot ink and display terminal

The present invention discloses a display device and a manufacturing method thereof having a light emission backplate, color conversion layer and a color film layer. The color conversion layer includes a red light conversion unit, a green light conversion unit, and an opening unit. The red light conversion unit and/or green light conversion unit includes calcium titanate light emitting material and scattering particles stacked in the calcium titanate light emitting material. In a vertical direction pointing from a surface of the color conversion layer near the light emission backplate to a surface away from the light emission backplate, a refractive index of the scattering particles gradually increases.

Display device and manufacturing method thereof

A perovskite light-emitting diode and a method of manufacturing the same are provided. The method includes steps of providing a substrate, disposing a first electrode layer, a hole transport layer, and a perovskite precursor liquid layer on the substrate, coating the perovskite precursor liquid layer with a first solvent, performing a first thermal process to form a perovskite prefabricated layer, coating the perovskite prefabricated layer with a second solvent, and performing a second thermal process to form a perovskite light-emitting layer.

Perovskite light-emitting diode and method of manufacturing the same

A perovskite film, method of preparing thereof, and an optoelectronic device are provided. They are prepared by steps including preparing a mixture containing a first monomer and a second monomer which can be crosslinked in situ; performing an annealing process, and the first monomer and the second monomer are reacted in situ to form a first polymer which combines with the perovskite crystal grains formed by the perovskite precursor and is concentrated at a crystal grain boundary of the perovskite crystal grains to passivate the perovskite crystal grain defects, and then a perovskite film is formed by curing.

Perovskite film, method of preparing thereof, and optoelectronic device

A quantum dot luminescent material and a method of producing thereof. The quantum dot luminescent material includes a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and an electron injection layer. The quantum dot luminescent layer is located on the hole transport layer, and the quantum dot luminescent layer includes uniformly distributed perovskite nanodots.

Quantum dot luminescent material an method of producing thereof

A color conversion layer and a manufacturing method of the same are provided. The manufacturing method of the color conversion layer includes steps of: subjecting a block copolymer thin film to self-assembly to obtain a self-assembled block copolymer thin film, including a plurality of main parts arranged in order, and a plurality of spacing parts disposed between the plurality of main parts; forming a protective layer covering the main parts; removing the spacing parts to form a plurality of grooves arranged in order; and dropping a color conversion layer ink into the grooves, followed by drying the color conversion layer ink to obtain the color conversion layer.

Color conversion layer and manufacturing method

A method of preparing a film and a light-emitting device are disclosed. The method includes: providing at least one gas-phase source above a substrate, the at least one gas-phase source made of materials comprising a perovskite material; and controlling an evaporation rate of the at least one gas-phase source to form a perovskite film. In the method provided by the present invention, a perovskite light-emitting layer is prepared by gas-phase source evaporation coating without an organic solvent, which avoids miscibility between the organic solvent and other layers and improves compatibility between the perovskite material and other film materials, thereby realizing the low preparation cost and the simple preparation process.

Method of preparing perovskite light-emitting layer and display application thereof

A present application provides a light-emitting device and a method of manufacturing the same. The light-emitting device includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode all laminated together. The hole transport layer is treated with a high boiling point polar solution to reduce a Coulomb force of the hole transport layer. The light-emitting device of the present application can improve light-emitting efficiency of the light-emitting device.

Light-emitting device having surface-treated hole transport layer and manufacturing method thereof

The present application discloses a perovskite light-emitting device, a preparation method thereof, and a display. The perovskite light-emitting device includes a first injection layer, a first transport layer, a light-emitting layer, a second transport layer, and a second injection layer, which are sequentially stacked, wherein the first injection layer includes indium tin oxide, the second injection layer includes carbon nanotubes, the light-emitting layer includes halide perovskite, and light emitted by the light-emitting layer is simultaneously emitted from the first injection layer and the second injection layer. The perovskite light-emitting device of the present application can stably emit light on double sides.

Perovskite light-emitting device, preparation method thereof, and display

A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes an anode, a luminous layer, and a cathode, which are disposed in a stacked manner, and a material of the luminous layer includes a perovskite material. A first transport layer is further provided between the luminous layer and the anode, and the first transport layer is configured to transport holes. Alternatively, a second transport layer is further provided between the cathode and the luminous layer, and the second transport layer is configured to transport electrons.

Growing community of inventors

Shenzhen, China

Yongwei Wu