Goertek Inc.

Weifang Goertek Microelectronics Co., Ltd.

Yongwei Dong

Quanbo Zou

Zhe Wang

An MEMS microphone is provided, comprising: a first substrate; a vibration diaphragm supported above the first substrate by a spacing portion, the first substrate, the spacing portion, and the vibration diaphragm enclosing a vacuum chamber, and a static deflection distance of the vibration diaphragm under an atmospheric pressure being less than a distance between the vibration diaphragm and the first substrate; and a floating gate field effect transistor outputting a varying electrical signal, the floating gate field effect transistor including a source electrode and a drain electrode both provided on the first substrate and a floating gate provided on the vibration diaphragm.

MEMS microphone

An MEMS microphone is provided, comprising a substrate and a vibration diaphragm supported above the substrate by a spacing portion, the substrate, the spacing portion, and the vibration diaphragm enclosing a vacuum chamber, and a static deflection distance of the vibration diaphragm under an atmospheric pressure being less than a distance between the vibration diaphragm and the substrate, wherein: a lower electrode forming a capacitor structure with the vibration diaphragm is provided on the substrate, and an electret layer providing an electric field between the vibration diaphragm and the lower electrode is provided on the substrate

An MEMS capacitor microphone is provided, comprising a first substrate and a vibration diaphragm supported above the first substrate by a spacing portion, the first substrate, the spacing portion, and the vibration diaphragm enclosing a vacuum chamber, and a static deflection distance of the vibration diaphragm under an atmospheric pressure being less than a distance between the vibration diaphragm and the first substrate, wherein a lower electrode forming a capacitor structure with the vibration diaphragm is provided on a side of the first substrate that is adjacent to the vacuum chamber, and an electric field between the vibration diaphragm and the lower electrode is 100-300 V/&#x3bc;m.

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Weifang, China

Yongwei Dong