Gwangju Institute of Science and Technology

Samsung Electronics Co., Ltd.

Yongtak Lee

Youngmin Song

Eunkyeong Min

Byunghoon Na

Yonghwa Park

Changyoung Park

Yongchul Cho

Gunwu Ju

An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.

Optical device including three-coupled quantum well structure

The present invention relates to an optical interconnection structure and a method for manufacturing the same. The optical interconnection structure includes a silicon substrate on which at least one groove formed with a lens is formed to have a curvature radius on the upper surface thereof; and a silica layer that is formed on the silicon substrate including the groove formed with the lens to retain a shape of the groove formed with the lens. As a result, there are effects that the optical interconnection structure can be manufactured in great quantities by performing most of the processes using a semiconductor processing equipment and have better thermal characteristics than that of the existing PCB substrate.

Optical interconnection structure and method for manufacturing the same

The present invention relates to an optical interconnection structure and a method for manufacturing the same. The present invention provides an optical interconnection structure comprising: a substrate on which a hole penetrating through a predetermined region is formed; and an optical guide member fixed to the inside of the hole of the substrate, wherein the optical guide member and the substrate are fixed by metal oxide. The present invention provides the optical interconnection structure that can facilitate the optical interconnection between the active optoelectronic devices that transmit/receive the optical signals and the optical waveguide, making it possible to enhance heat dissipation efficiency and improve operation speed.

Provided is a reflection type optical sensor device including: a semiconductor light source being formed by providing a light emitting region on a predetermined region of a substrate; and a photo-detection element being integrated on the same substrate as the substrate where the semiconductor light source is formed to surround an outer circumferential surface of the semiconductor light source, and including a light receiving region. When the light emitted from the semiconductor light source is reflected by an external object, the photo-detection element may detect the light to sense the object. Through this, it is possible to reduce cost and ensure a small size. Also, the photo-detection element is constructed to surround the outer circumferential surface of the semiconductor light source, and thus more accurately detect the light.

Growing community of inventors

Gwangju, South Korea

Yongtak Lee