Samsung Electronics Co., Ltd.

California Institute of Technology

Korea Advanced Institute of Science and Technology

Industry-university Cooperation Foundation Hanyang University

Leland Stanford Junior University

Seoul National University

Cornell University

Ajou University Industry-academic Cooperation Foundation

Iucf-hyu

Yongsung Kim

Jooho Lee

Changseung Lee

Jeongyub Lee

Jeonggyu Song

Jaekwan Kim

Kiyeon Yang

Narae Han

Seunghoon Han

Changsoo Lee

Wooyoung Yang

Boeun Park

Daehyun Ban

Dongwan Lee

Eunsun Kim

Andrei Faraon

Jinhong Kim

Amir Arbabi

Woojin Lee

Haeryong Kim

Kiyoung Lee

Yu Horie

Eunae Cho

Juyoung Lee

Yong-hee Cho

Myoungho Jeong

Jaeho Lee

Hyungjun Kim

Changgyun Shin

Wenxu Xianyu

Sanghoon Song

Kwanghee Lee

Kyooho Jung

Junghwa Kim

Chanwon Seo

Xianyu Wenxu

Seokho Song

Jonghwa Shin

Lei Zhang

Jeongil Bang

JaeWoong Yoon

Yongwan Jin

Youngsun Choi

Choloong Han

Hongpyo Lee

Reehyang Kim

Bo-Eun Park

Kyung Bae Park

Jungmin Park

Jangwoo You

Byunghoon Na

Sungwoo Hwang

Seunghyun Lee

Kenneth E Goodson

Junsik Hwang

Kyu Sik Kim

Sungjin Lim

Takkyun Ro

Byoungho Lee

Euncheol Do

Byonggwon Song

Yehoon Kim

Sung Heo

Hyunsoo Choi

Jiwoon Park

Kyuho Cho

Darrell G Schlom

Seyedeh Mahsa Kamali

Sojung Yun

Yongsu Kim

Mehdi Asheghi

Dongjin Yun

Yongyoung Park

Taeeun Kim

Siwoo Lee

Hyosik Mun

ChanJu Park

SangWoon Lee

Seong Heon Kim

Jaikwang Shin

Changyoul Moon

Eric Pop

H-s Philip Wong

Yong-Young Park

Chiyui Ahn

Aditya Sood

Scott Fong

Christopher M Neumann

Nam Jeong Kim

Yeoreum Yoon

Jiyong Jang

Hanjin Cho

Craig J Fennie

Natalie M Dawley

Gerhard H Olsen

Zhe Wang

A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).

Capacitor, semiconductor device comprising the capacitor, and method of fabricating the capacitor

A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrTiOin which a content of Ti is greater than a content of Sr.

Capacitor, method of fabricating the capacitor, and electronic device including the capacitor

Provided are a semiconductor device and a semiconductor apparatus including the same, the semiconductor device including: a first electrode; a second electrode apart from the first electrode; a dielectric structure provided between the first electrode and the second electrode and including a dielectric layer including a metal oxide represented by MO; and a leakage current reducing layer including a metal oxide represented by La'M′′O.

Device with dielectric metal oxide layers and semiconductor apparatus including the same

A capacitor includes a lower electrode layer including a first conductive layer and a second conductive layer on the first conductive layer, the second conductive layer including SnOdoped with an impurity; a dielectric layer on the second conductive layer, the dielectric layer including a rutile-phase oxide; and an upper electrode layer on the dielectric layer.

Capacitor, memory device including the capacitor

A server for pose estimation of a person and an operating method of the server are provided. The operating method includes obtaining an original image including a person, generating a plurality of input images by rotating the original image, obtaining first pose estimation results respectively corresponding to the plurality of input images, by inputting the plurality of input images to a pose estimation model, applying weights to the first pose estimation results respectively corresponding to the plurality of input images, and obtaining a second pose estimation result, based on the first pose estimation results to which the weights are applied, wherein the first pose estimation results and the second pose estimation result each include data indicating main body parts of the person.

Server for pose estimation and operating method of the server

A method of operating an image processing apparatus is provided. The method includes generating a first feature map by performing a convolution operation between a first image and a first kernel group, generating a second feature map by performing a convolution operation between the first image and a second kernel group, generating a first combination map based on the first feature map, generating a second combination map based on the first feature map and the second feature map, generating a second image based on the first combination map and the second combination map, and generating a reconstructed image of the first image, based on the second image and the first image, and generating a high-resolution image of the first image by inputting the reconstructed image to an upscaling model.

Image processing apparatus and operating method thereof

Provided are a thin film structure, a capacitor including the thin film structure, a semiconductor device including the thin film structure, and a method of manufacturing the thin film structure, in which the thin film structure may include: a first electrode thin film disposed on a substrate and including a first perovskite-based oxide; and a protective film disposed on the first electrode thin film and including a second perovskite-based oxide that is oxygen-deficient and includes a doping element. The thin film structure may prevent the deterioration of conductivity and a crystalline structure of a perovskite-based oxide electrode, which is a lower electrode, even in a high-temperature oxidizing atmosphere for subsequent dielectric film deposition.

Thin film structure including method of manufacturing

A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfAOsatisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfAOis in a range of 0.3 to 0.5.

Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same

A method of designing an optical system including a dome light and coaxial light, includes: determining a distance between the dome light and the coaxial light based on a radius reduction according to a hole of the dome light; determining a size of the coaxial light based on an optical path of a light ray emitted from the coaxial light; and determining a structure of a printed circuit board (PCB) in the dome light based on an optical path through which the light ray emitted from the coaxial light is reflected by an object.

Optical system including dome light and coaxial light and method for designing optical system

A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO, and a leakage current reducing layer including GeOin the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

Capacitor and electronic device including the same

A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InO-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.

Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the same

An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.

Anti-ferroelectric thin-film structure and electronic device including the same

A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO, wherein at least one of A and B in ABOis substituted and doped with another atom having a larger atom radius, and ABObecomes AA'BB′O(where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

Thin film structure including dielectric material layer and electronic device including the same

A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation: where Vis a capacitance boosting operating voltage, Zis impedance of the ferroelectric film, Zis impedance of the dielectric film, tis a thickness of the ferroelectric film, and Eis an electric field applied to the ferroelectric film having a maximum polarization.

Capacitor, method of controlling the same, and transistor including the same

An image sensor includes a first light sensor layer including light sensing cells configured to sense first light of an incident light and generate electrical signals based on the sensed first light, and a color filter array layer disposed on the first light sensor layer, and including color filters respectively facing the light sensing cells. The image sensor further includes a second light sensor layer disposed on the color filter array layer, and configured to sense second light of the incident light and generate an electrical signal based on the sensed second light. Each of the color filters includes a nanostructure including a first material having a first refractive index, and a second material having a second refractive index greater than the first refractive index, the first material and the second material being alternately disposed with a period.

Image sensor including nanostructure color filter

Growing community of inventors

Suwon-si, South Korea

Yongsung Kim