Samsung Electronics Co., Ltd.

Yongsuk Tak

Gukhyon Yon

Junghan Lee

Suhyeong Lee

Teawon Kim

Yurim Kim

Jiwon Yun

MinKyung Kang

Seohee Park

A semiconductor apparatus includes a bit line extending in a first horizontal direction on a substrate; a channel layer on the bit line, the channel layer extending in a vertical direction, including a first oxide semiconductor material that includes indium, and having a first side wall and a second side wall; a word line on the first side wall of the channel layer; a contact forming region on a top surface and an upper portion of the second side wall of the channel layer, the contact forming region including a second oxide semiconductor material that includes indium and having a resistivity lower than a resistivity of the channel layer; a contact layer on the contact forming region; and a capacitor structure on a top surface of the contact layer.

Semiconductor apparatus

Provided is a method of manufacturing a semiconductor device, the method including: forming a mold structure comprising insulation layers and sacrificial layers alternately and repeatedly stacked on a substrate; forming a channel hole extending through the mold structure; forming a blocking layer in the channel hole; forming a charge storage layer on the blocking layer; forming a tunnel insulation layer including a doping element on the charge storage layer; performing heat treatment to diffuse the doping element from the tunnel insulation layer to the charge storage layer; and forming a channel layer on the tunnel insulation layer.

Method of manufacturing semiconductor device comprising doping element in the charge storage layer

Growing community of inventors

Seoul, South Korea

Yongsuk Tak