Samsung Electronics Co., Ltd.

Yongsuk Choi

Hyeokjong Lee

Kwang Soo Kim

Sangyun Lee

Taejoong Kim

Myeongjin Oh

Youngduk Kim

Byeonghwan Jeon

Taeseok Oh

Keo-sung Park

Kyungjin Park

Hakyu Choi

Dongwook Won

Yong-Ho Choi

An image sensor includes a pixel array including a plurality of pixel groups arranged in a plurality of rows and columns, the plurality of pixel groups configured to convert a light into electrical signals and to generate pixel signals, a row driver configured to generate a plurality of control signals for controlling the rows of the pixel array, and one or more power management devices configured to generate a power supply voltage for generating the plurality of control signals based on an input signal, and supply the power supply voltage to the row driver. Each of the one or more power management devices includes a first chopping circuit configured to modulate the input signal, an amplifier configured to generate an output signal based on the modulated input signal, and a second chopping circuit configured to demodulate the output signal and to modulate a noise caused by the amplifier.

Image sensor including power management unit for noise reduction using chopping operation and operation method thereof

A semiconductor device includes: a memory test circuit that outputs a fourth signal based on a logic level of a second signal corresponding to a first signal output by a host and a logic level of a third signal; a memory device that becomes active or inactive based on a logic level of the fourth signal; and a test logic that outputs the third signal and performs a retention test on the memory device based on the logic level of the second signal.

Semiconductor device and retention test method

A method of manufacturing an image sensor includes forming a first dopant region having a second conductivity type in a semiconductor substrate including first and second surfaces. The semiconductor substrate has a first conductivity type different from the second conductivity type. The method further includes forming a pixel isolation structure defining pixel regions in the semiconductor substrate, forming a vertical trench by patterning the first surface in each of the pixel regions, forming a mask pattern exposing each of the pixel regions on the first surface, in which the mask pattern includes a residual mask pattern filling at least a portion of the vertical trench, forming a second dopant region having the second conductivity type in the semiconductor substrate by using the mask pattern as an ion-implantation mask, in which the second dopant region is adjacent to the vertical trench, and forming a transfer gate electrode in the vertical trench.

Image sensor and method of manufacturing the same

A correlated double sampling (CDS) circuit, an operating method thereof, and an image sensor including the CDS circuit are disclosed. The CDS circuit includes a first comparator configured to operate based on a first bias current, and compare, with a ramp signal, a pixel voltage that is output from a pixel, during a first period and a fourth period during which the pixel operates in a low conversion gain (LCG) mode, a second comparator configured to operate based on a second bias current, and compare, with the ramp signal, the pixel voltage output from the pixel, during a second period and a third period during which the pixel operates in a high conversion gain (HCG) mode, the second period being after the first period, the third period being after the second period, and the fourth period being after the third period.

CDS circuit, operating method thereof, and image sensor including CDS circuit

CDS circuit, operating method thereof, and image sensor including CDS  circuit

An optical inspection apparatus includes an inspection target unit on which an inspection target is loaded, an illumination optical unit configured to irradiate incident light to the inspection target, an objective lens unit disposed between the illumination optical unit and the inspection target unit, a detection optical unit configured to receive reflective light reflected from the inspection target to thereby detect a presence or absence of a defect on the inspection target, and a control unit configured to control the illumination optical unit and the detection optical unit. The illumination optical unit includes a light source part configured to irradiate the incident light, and a spatial filter array configured to modify a transmission region of the incident light irradiated from the light source part. The spatial filter array includes a spatial filter part, and a filter movement part configured to move the spatial filter part.

Optical inspection apparatus, a method of inspecting a substrate, and a method of treating a substrate

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Hwaseong-si, South Korea

Yongsuk Choi