Samsung Electronics Co., Ltd.

Yongsik Yim

Dong-Sik Lee

Eunsuk Cho

Gilsung Lee

Kangyoon Choi

Changhyun Lee

Jungdal Choi

Yoocheol Shin

Provided is a three-dimensional semiconductor memory device include a first stack structure and a second stack structure adjacent to each other on a substrate, a first common source plug between the first stack structure and the second stack structure, a second common source plug between the first stack structure and the second stack structure, and a vertical dielectric structure between the first common source plug and the second common source plug. Each of the first stack structure and the second stack structure may include a plurality of insulation layers and a plurality of electrodes alternately stacked on the substrate. The first common source plug may be connected to the substrate. The second common source plug may be spaced apart from the substrate.

Three-dimensional semiconductor memory device including first vertical structure on first region of substrate and wider second vertical structure on second region of substrate

Three-dimensional semiconductor memory device

A nonvolatile memory device includes a word line group including a plurality of middle word lines and an edge word line having charge storage patterns on a substrate. A peripheral line is disposed on one side of the word line group so that the edge word line is between the peripheral word line and the middle word lines. The peripheral line includes an insulating layer and a gate electrode. Charge storage patterns of the middle and edge word lines are separated from each other, and a charge storage pattern of the edge word line extends on one side to be connected to the insulating layer of the peripheral line. Methods of forming nonvolatile memory devices are also disclosed.

Nonvolatile NAND-type memory devices including charge storage layers connected to insulating layers

Growing community of inventors

Seongnam-si, South Korea

Yongsik Yim