Applied Materials, Inc.

Yongsik Moon

Kapila P Wijekoon

Fred Conrad Redeker

Rajeev Bajaj

Shijian Li

Jui-lung Li

Yongqi Hu

Tony Kaushal

David H Mai

Shi-Ping Wang

Rahul Surana

Gary Lam

Yan Wang

Shou-Sung Chang

Alain Duboust

Antoine P Manens

Wei Guang Lu

Siew Neo

A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.

Multi-layer polishing pad for low-pressure polishing

Method and apparatus for polishing substrates. A chemical mechanical polishing article comprises a body and a patterned surface. The patterned surface comprises a plurality of slurry distribution grooves and a plurality of islands on the body. Each of the plurality of the islands comprises a base portion, a polishing surface disposed thereon, and a contoured surface disposed therebetween. The base portion comprises one or more sidewalls defining at least a portion of the plurality of slurry distribution grooves. The polishing surface is smaller than the base portion, the difference therebetween attributable to the contoured surface. In a particular embodiment, conductive materials and low k dielectric films are polished with reduced or minimum substrate surface damage.

Method and apparatus for polishing substrates

Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Method and apparatus for polishing metal and dielectric substrates

Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects

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San Mateo, CA, United States of America

Yongsik Moon