Samsung Electronics Co., Ltd.

Yongseung Kim

Pankwi Park

Jungtaek Kim

Ryong Ha

Seojin Jeong

Moonseung Yang

Dongchan Suh

Minhee Choi

Seungryul Lee

An integrated circuit device includes a fin-type active region protruding from a substrate and extending in a first direction, a plurality of semiconductor patterns disposed apart from an upper surface of the fin-type active region, the plurality of semiconductor patterns each including a channel region; a gate electrode surrounding the plurality of semiconductor patterns, extending in a second direction perpendicular to the first direction, and including a main gate electrode, which is disposed on an uppermost semiconductor pattern of the plurality of semiconductor patterns and extends in the second direction, and a sub-gate electrode disposed between the plurality of semiconductor patterns; a spacer structure disposed on both sidewalls of the main gate electrode; and a source/drain region connected to the plurality of semiconductor patterns, disposed at both sides of the gate electrode, and contacting a bottom surface of the spacer structure.

Integrated circuit device and method of manufacturing the same

Growing community of inventors

Seongnam-si, South Korea

Yongseung Kim