Samsung Display Co., Ltd.

Yongseon Jo

Jin Hee Jeon

Donghwan Shim

Cheol Jang

Jongmin Lee

Kwangwoo Park

Kohei Ebisuno

Sugwoo Jung

Eonjoo Lee

Youngin Hwang

Joohyeon Jo

Heeyeon Kim

Jinsuk Lee

Illhwan Lee

Byungno Kim

Nalae Lee

Changha Kwak

Shinbeom Choi

Jinyong Lee

Jin-Yong Lee

Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).

Thin-film transistor, display apparatus including the same, and method of manufacturing display apparatus

A display apparatus includes a substrate, a first light-emitting element disposed over the substrate to emit light, a first dummy light-emitting element disposed over the substrate to emit light of a same color as a color of the light emitted from the first light-emitting element, an input sensing layer disposed on the first light-emitting element and the first dummy light-emitting element, and a light-blocking layer disposed on the input sensing layer, where an opening is defined through the light-blocking layer to overlap the first light-emitting element, and the input sensing layer includes a diffraction structure disposed to overlap the first dummy light-emitting element.

Display apparatus

A pixel circuit includes a light-emitting element, a write transistor writing a data voltage, a driving transistor generating a driving current based on the data voltage and applying the driving current to the light-emitting element, a first initialization transistor applying a first initialization voltage to a control electrode of the driving transistor, a blocking transistor disposed between the light-emitting element and the driving transistor, a first blocking control transistor including a control electrode connected to the control electrode of the driving transistor, a first electrode receiving a first signal, and a second electrode connected to a control electrode of the blocking transistor, and a second blocking control transistor including a control electrode connected to the control electrode of the driving transistor, a first electrode receiving a second signal, and a second electrode connected to the control electrode of the blocking transistor.

Pixel circuit and display device including the same

Growing community of inventors

Yongin-si, South Korea

Yongseon Jo