Chongqing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Boe Technology Groupco., Ltd.

Yongliang Zhao

Zhonghao Huang

Ming Wang

Xiaonan Dong

Xu Wu

Seung Moo Rim

Seungmoo Rim

Hongru Zhou

Chao Zhang

Kai Wang

Wei Shen

Taeyup Min

Zhiyong Ning

Zhaojun Wang

Yutong Yang

Jianfei Shi

Baosheng He

Houfeng Zhou

A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.

Thin film transistor and manufacturing method thereof and electronic device

A flexible display device includes a flexible display panel, a reel, a substantially U-shaped guide rail, and a magnetic field generating member. The reel is provided with a slit opening in a surface thereof and a rotating shaft inside. The U-shaped guide rail has an open side and a closed end, and the closed end is arranged adjacent to the rotating shaft. The rectilinear conductor is configured to bridge the open side of the U-shaped guide rail to form a closed circuit with the U-shaped guide rail. The magnetic field generating member is configured to provide a magnetic field to the rectilinear conductor. A first side edge of the flexible display panel is connected with the rotating shaft of the reel through the slit opening, and a second side edge of the flexible display panel opposite to the first side edge is connected with the rectilinear conductor.

Flexible display device

A pixel circuit and a display device are provided. The pixel circuit includes: a driving transistor; a switching transistor for transmitting a data voltage signal to a first electrode of the driving transistor; a storage capacitor having a first terminal coupled to a control electrode of the driving transistor, and a second terminal coupled to a reference voltage terminal; a threshold voltage extraction unit for coupling the control electrode of the driving transistor to a second electrode of the driving transistor through the scan signal; a light emission control unit for transmitting a second power voltage to the first electrode of the driving transistor; a light emitting device having a first electrode coupled to a second electrode of the driving transistor and a second electrode receiving a first power voltage; a compensation unit for transmitting a compensation voltage to a second electrode of the switching transistor.

Pixel circuit and display device

Disclosed is a display device, a manufacturing method thereof and a display apparatus. The display device includes a carrier having a first surface and a second surface opposite to each other, and at least one nanotube in the carrier. Each nanotube includes a tube wall and a receiving cavity surrounded by the tube wall. The receiving cavity includes a first open end at the first surface and a second open end at the second surface. The display device further includes a first electrode at the first open end, a second electrode at the second open end and a light-emitting layer between the first electrode and the second electrode.

Display device including OLED surrounded by nanotube extending through carrier, and manufacturing method thereof

The present disclosure is related to a display panel. The display panel may include a plurality of switch units. Each of the plurality of the switch units may include a first electrode; a second electrode; a third electrode; a fourth electrode opposite the first electrode; a piezoelectric material layer between the first electrode and the fourth electrode; a connecting electrode above the fourth electrode and electrically insulated from the fourth electrode; and a driving transistor comprising a driving gate. The driving gate may be the third electrode. An orthogonal projection of the second electrode and an orthogonal projection of the third electrode on a plane of the connecting electrode may overlap the connecting electrode respectively.

Switch unit, display panel, manufacturing method thereof, and display apparatus

The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.

Thin film transistor, array substrate, display apparatus, and method of fabricating thin film transistor

A thin film transistor is disclosed. The thin-film transistor includes an active layer (); a source electrode (); and a drain electrode (). The active layer includes an active pattern region (), the active pattern region including a main body portion () and a plurality of protrusion portions () on both sides of the main body portion. The protrusion portions are connected to the main body portion.

Thin-film transistor and fabrication method thereof, array substrate and display device

The disclosure discloses a thin film transistor, a method for fabricating the same, an array substrate, and a display panel. The thin film transistor includes: a first conductive layer on a base substrate, a first insulation layer on a side of the first conductive layer facing away from the base substrate, and a second conductive layer on a side of the first insulation layer facing away from the first conductive layer, wherein an active layer is arranged on a side of the first insulation layer facing the first conductive layer, and/or a side thereof facing the second conductive layer.

Thin film transistor, method for fabricating the same, array substrate, and display panel

A light guide plate, a method for fabricating the same, a backlight module, and a display panel are disclosed. The light guide plate includes a flexible base layer, a photonic crystal array layer on the flexible base layer, and a transparent planarization layer encapsulating the photonic crystal array layer. The photonic crystal array layer includes photonic crystals which are arranged in an array.

Light guide plate and method for fabricating the same, backlight module and display panel

A package structure and packing method for an organic electroluminescence element and an organic electroluminescence device are provided. The package structure for the organic electroluminescence element includes: a substrate, an organic electroluminescence element, and a quantum dot packaging layer. The organic electroluminescence element is disposed on the substrate, the quantum dot packaging layer is disposed on the substrate and the organic electroluminescence element, and consists of a quantum dot material.

Package structure consisting of quantum dot material and packaging method for organic electroluminescence element and display device

A patterning method employing a half tone mask includes the steps of: successively forming a first thin film layer, a second thin film layer and a photoresist thin film layer on a substrate; exposing and developing the photoresist thin film layer by using a half tone mask plate; performing a first etching on the substrate that is exposed and developed; performing a second etching on the substrate that has been subject to the first etching; passivating the substrate that has been subject to the first etching; ashing the substrate that has been passivated; performing a third etching on the substrate that has been subject to the ashing and the second etching; and, stripping the substrate that has been subject to the third etching.

Growing community of inventors

Beijing, China

Yongliang Zhao