Samsung Electronics Co., Ltd.

New Power Plasma Co., Ltd.

Yongkwan Lee

Seunghwan Kim

Jungjoo Kim

Jongwan Kim

Junwoo Park

Jongho Park

Sangsoo Kim

Junyoung Oh

Hyunki Kim

Hyunggil Baek

Seung Hwan Kim

Jongho Lee

Junga Lee

Taejun Jeon

Juhyeon Oh

Kyong Hwan Koh

Kyonghwan Koh

Kyung Suk Oh

Kyungsuk Oh

Seungkon Mok

Changyoung Yoo

Dongwook Kim

Jongbo Shim

Changkyu Choi

Choongbin Yim

Jihwang Kim

Daewook Kim

Hogeon Song

Sungkyu Park

Jun Young Oh

Dong-Ju Jang

Boeun Jang

Byoungwook Jang

Kundae Yeom

Seokyeon Hwang

Jaeho Kwak

Wonpil Lee

Yonghyun Kim

Junhyeung Jo

Dongju Jang

Yongseok Seo

A semiconductor package includes an interposer including an upper pad and an upper passivation layer partially covering the upper pad, a semiconductor chip disposed on the interposer, a conductor pattern disposed on the interposer, a guide pattern disposed on the interposer while including a main opening and at least one sub-opening connected to the main opening, a support disposed on the interposer while including a core portion and a peripheral portion surrounding the core portion, a lower surface of the support being disposed in the main opening of the guide pattern, an upper redistribution structure disposed on the semiconductor chip and connected to the conductor pattern and the guide pattern, and an encapsulant between the interposer and the upper redistribution structure. The encapsulant contacts an inner wall of the main opening, an inner wall of the at least one sub-opening and a side surface of the support.

Semiconductor packages having fixing members

A semiconductor package including a dielectric layer on a substrate and having an opening that partially exposes a top surface of the substrate, a capacitor chip on the substrate and in the opening of the dielectric layer, connection terminals between the substrate and the capacitor chip and connecting the substrate and the capacitor chip to each other, dielectric patches on the substrate and in the opening of the dielectric layer, and an under-fill filling a space between the substrate and the capacitor chip may be provided. The space between the substrate and the capacitor chip includes a first region, a second region, and a third region between the first and second regions. The connection terminals are on the first region and the second region. The dielectric patches are on the third region.

Semiconductor package

A semiconductor package is provided. The semiconductor package includes a package substrate, an interposer including a lower protective layer, conductive connectors connecting the package substrate to the interposer, a semiconductor chip arranged between the package substrate and the interposer, and cooling patches arranged between the semiconductor chip and the interposer and having cylindrical shapes, wherein each of the cooling patches includes the same material as each of the conductive connectors, a height of each of the cooling patches is less than or equal to a diameter of each of the cooling patches, and thermal conductivity of each of the cooling patches is greater than thermal conductivity of the lower protective layer.

A semiconductor package includes a package substrate including a base substrate including a redistribution layer, pads disposed on first and second surfaces of the base substrate and connected to the redistribution layer, and a protective layer having a mounting region in which first openings respectively exposing first pads among the pads and a second opening exposing second pads among the pads and a portion of the second surface are disposed on the second surface; a semiconductor chip disposed on the mounting region and connected to the pads through the first openings and the second opening; and a sealing material covering a portion of the semiconductor chip and extending into the second opening. Four first openings among the first openings are respectively disposed adjacent to respective corners of the mounting region. The second opening is disposed to divide the four first openings into at least two groups.

Package substrate and semiconductor package including the same

A semiconductor package includes; a package substrate, a semiconductor chip on the package substrate, an electromagnetic shield structure on the package substrate and including an upper cover covering an upper surface of the semiconductor chip and a side cover surrounding the semiconductor chip, and a sealing member contacting the semiconductor chip and the electromagnetic shield structure, wherein the side cover includes first through holes and the upper cover includes second through holes.

Semiconductor package including electromagnetic shield structure

A method of manufacturing a semiconductor package may include providing a substrate having first and second cutting regions respectively provided along first and second side portions opposite to each other and a mounting region between the first and second cutting regions is provided, disposing at least one semiconductor chip on the mounting region, forming a molding member on the substrate, and removing a dummy curl portion and at least portions of dummy runner portions from the molding member. The molding member may include a sealing portion, the dummy curl portion provided outside the second side portion of the substrate, and the plurality of dummy runner portions on the second cutting region to connect the sealing portion and the dummy curl portion. The substrate may include adhesion reducing pads in the second cutting region, which may contact the dummy runner portions respectively.

Molded product for semiconductor strip and method of manufacturing semiconductor package

A semiconductor package includes a lower substrate that includes a lower wiring layer; a semiconductor chip disposed on the lower substrate, and an upper substrate disposed on the semiconductor chip. The upper substrate includes a lower surface that faces the semiconductor chip, an upper wiring layer, and a plurality of protruding structures disposed below the lower surface. The lower surface of the upper substrate includes a cavity region that overlaps the semiconductor chip in a first direction, and a plurality of channel regions that extend from the cavity region to an edge of the upper substrate. The cavity region and the plurality of channel regions are defined by the plurality of protruding structures.

A semiconductor package includes a package substrate having a communication hole extending from an upper surface of the package substrate to a lower surface of the package substrate, a semiconductor chip attached to the upper surface of the package substrate, an auxiliary chip attached to the lower surface of the package substrate, external connection terminals attached to the lower surface of the package substrate and spaced apart from the auxiliary chip, and an encapsulant encapsulating the semiconductor chip and the auxiliary chip and filling the communication hole.

Semiconductor package having package substrate

A semiconductor package including a substrate including at least one ground pad and a ground pattern; a semiconductor chip on the substrate; and a shield layer on the substrate and covering the semiconductor chip, wherein the shield layer extends onto a bottom surface of the substrate and includes an opening region on the bottom surface of the substrate, a bottom surface of the at least one ground pad is at the bottom surface of the substrate, a side surface of the ground pattern is at a side surface of the substrate, and the shield layer on the bottom surface of the substrate is in contact with the bottom surface of the at least one ground pad and in contact with the side surface of the ground pattern.

A semiconductor package is provided. The semiconductor package includes: a first package substrate; a first semiconductor chip on the first package substrate; an interposer substrate including a lower surface facing the first package substrate, an upper surface opposite to the lower surface, and an upper conductive pad in the upper surface of the interposer substrate; a first dam structure on the upper surface of the interposer substrate and extending along an edge of the upper conductive pad; a first molding layer in contact with the lower and upper surfaces of the interposer substrate and with an outer wall of the first dam structure; and a conductive connector in contact with an inner wall of the at least one first dam structure and with the upper conductive pad.

Interposer and semiconductor package including the same

A semiconductor package includes a base substrate that includes a first surface and a second surface that face each other, a plurality of first metal line patterns disposed on the first surface, a plurality of second metal line patterns disposed on the second surface, a plurality of vias that penetrate the base substrate and connect the first metal line patterns to the second metal line patterns, a semiconductor chip disposed on the first surface, and a molding member that covers the first surface and the semiconductor chip. The base substrate includes at least one recess at a corner of the base substrate. The recess extends from the first surface toward the second surface. The molding member includes a protrusion that fills the recess.

Semiconductor package including plurality of recesses and molding member with plurality of protrusions that fill the recesses

A semiconductor package includes a first package substrate; a first semiconductor chip on the first package substrate; a first conductive connector on the first package substrate; and an interposer including a central portion on the first semiconductor chip and an outer portion having the first conductive connector attached thereto. The central portion of the interposer includes a bottom surface defining a recess from a bottom surface of the outer portion of the interposer in a vertical direction that is perpendicular to a top surface of the first package substrate. A thickness in the vertical direction of the outer portion of the interposer is greater than a thickness in the vertical direction of the central portion of the interposer.

Interposers and semiconductor packages including the same

A semiconductor package including a circuit substrate including a plurality of interconnections; a first chip on the circuit substrate; a second chip stacked on the first chip; a plurality of first pads on the circuit substrate, the plurality of first pads overlapping the first chip; a plurality of bumps between the circuit substrate and the first chip; a plurality of second pads on an edge portion of a first side of the circuit substrate, the plurality of second pads electrically connected to the second chip through a conductive wire; an underfill that fills a space between the circuit substrate and the first chip; and a first dam on the circuit substrate, the first dam overlapping the first chip. The first dam includes a conductive material and overlaps at least one of the plurality of interconnections.

A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

Growing community of inventors

Hwaseong-si, South Korea

Yongkwan Lee