Chinese Academy of Sciences

Yongkui Zhang

Huilong Zhu

Xiaogen Yin

Anyan Du

Huaxiang Yin

Chen Bo Li

Chen Li

Zhiguo Zhao

Zhiyong Lu

An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.

High-precision etching method

A semiconductor device is provided that has a plurality of Fin structures extending on a substrate along a first direction; a gate stack structure extending on the substrate along a second direction and across the plurality of Fin structures, wherein the gate stack structure comprises a gate conductive layer and a gate insulating layer, and the gate conductive layer is formed by a doped poly-semiconductor; trench regions in the plurality of Fin structures and beneath the gate stack structure; and source/drain regions on the plurality of Fin structures and at both sides of the gate stack structure along the first direction. A method of manufacturing a semiconductor device is also provided.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Beijing, China

Yongkui Zhang