Samsung Electronics Co., Ltd.

Technical Coating Solution Line-x Co., Ltd.

Yongjun Cho

Sunyool Kang

Heesung Chae

Yunhwan Jung

Haesick Sul

Sukki Yoon

Sangwoo Kim

Kyungmin Kim

Kyungtae Kim

Junyoung Lee

Yoonyoung Choi

Sanghoon Song

Youn-Gun Jung

Munhee Jang

Yunhong Kim

Changjun Lee

Dongwan Kim

Seung-Hyeok An

Jeong-Hyun Kim

Yoong Chung

Jiho Jeon

Injun Choi

Saya Lee

Dayeon Kim

There is provided a storage device which includes a nonvolatile memory device that includes a first area and a second area, and a controller that receives a first command from an external host device, generates a physical address by performing first error correction decoding on a physical address entry included in the first command, reads first data from the second area of the nonvolatile memory device by using the physical address, and outputs the first data to the external host device. When the first error correction decoding fails, the controller reads first map data from the first area from the nonvolatile memory device, translates a logical address included in the first command into the physical address by using the first map data, reads the first data from the second area of the nonvolatile memory device by using the physical address, and outputs the first data to the external host device.

Storage device including nonvolatile memory device and controller

Insulation structures, insulated piping devices including the same, and methods of fabricating the same are disclosed. The insulation structure includes a first insulation layer on an outer surface of a pipe, a second insulation layer on an outer surface of the first insulation layer that includes a material different from a material of the first insulation layer, and a third insulation layer on an outer surface of the second insulation layer that includes a material different from the material of the second insulation layer. A thickness of the second insulation layer is greater than a thickness of the first insulation layer and a thickness of the third insulation layer. The second insulation layer includes a porous foam.

Insulation structure, insulated piping device including the same, and method of fabricating the same

Provided are analog-digital converting circuits including a comparator, and an image sensor. The analog-digital converting circuit include a counter and a comparator, the comparator including a first P-type transistor including a gate connected to a first input node of the comparator, a second P-type transistor including a gate connected to a second input node of the comparator, a first N-type transistor including a gate connected to the first input node and a drain connected to the first P-type transistor, a second N-type transistor including a gate connected to the second input node and a drain connected to the second P-type transistor, and a transistor including a gate connected to the drain of the first N-type transistor and a source to which ground voltage or power supply voltage is applied.

Analog-digital converting circuit including comparator, and image sensor including the analog-digital converting circuit

Disclosed is an image sensor device which includes an image pixel that outputs a reset voltage and a first data voltage through a data line, and a voltage hold circuit that is connected with the data line, stores a first voltage based on the reset voltage, and provides the data line with a second voltage based on the first voltage.

Image sensor device and operation method thereof

An image sensor includes a first amplifier comparing and amplifying a first voltage signal received from a first column line, and a ramp signal; a second amplifier amplifying an output of the first amplifier; a third amplifier comparing and amplifying a second voltage signal received from a second column line, and the ramp signal; and a fourth amplifier amplifying an output of the third amplifier, wherein the second amplifier and the fourth amplifier output a decision signal at different points in time by dummy switch control split.

Image sensor, image device having the same, and operating method thereof

An image sensor, including a pixel array including a plurality of pixels connected to row lines extending in a first direction and column lines extending in a second direction intersecting the first direction; a ramp voltage generator configured to output a ramp voltage; a sampling circuit including a plurality of comparators, each comparator of the plurality of comparators having a first input terminal connected to a column of the column lines and a second input terminal configured to receive the ramp voltage; and an analog-to-digital converter configured to convert an output of the plurality of comparators to a digital signal, wherein the plurality of comparators include a first comparator connected to a first column line, and a second comparator connected to a second column line adjacent to the first column line in the first direction, wherein each of the first comparator and the second comparator includes a first transistor and a second transistor disposed sequentially in the second direction, and wherein a gap between the first transistor of the first comparator and the second transistor of the first comparator is different from a gap between the first transistor of the second comparator and the second transistor of the second comparator.

Image sensor having reduced parasitic capacitance

An electronic circuit is provided. The electronic circuit includes a first current generating circuit configured to output a first operating current based on a first operating voltage; and an input circuit configured to: receive a first current corresponding to a first input voltage and a second current corresponding to a second input voltage, wherein the first current and the second current are based on the first operating current; receive a third current and a fourth current that are generated based on the first operating voltage; and generate a fifth current corresponding to the second input voltage based on a second operating current. The electronic circuit is configured to generate an output voltage that is associated with a difference between the first input voltage and the second input voltage based on the second current, the fourth current and the fifth current, and the fourth current corresponds to the third current.

Electronic circuit for configuring amplifying circuit configured to output voltage including low noise

Mobile phone

Growing community of inventors

Hwaseong-si, South Korea

Yongjun Cho