Samsung Electronics Co., Ltd.

Seoul National University

Rensselaer Polytechnic Institute

Agency for Defense Development

Hexasolution Co., Ltd.

Yongjo Park

Duk-Kyu Bae

Eui-Joon Yoon

Dae-Young Moon

Jeong-Hwan Jang

Martin F Schubert

Min-Ho Kim

Euijoon Yoon

E Fred Schubert

Jong Kyu Kim

Cheolsoo Sone

Sukho Yoon

Young-Boo Moon

Chulkyun Seok

Chiyeon Kim

A semiconductor stacking structure according to the present invention comprises: a monocrystalline substrate which is disparate from a nitride semiconductor; an inorganic thin film which is formed on a substrate to define a cavity between the inorganic thin film and the substrate, wherein at least a portion of the inorganic thin film is crystallized with a crystal structure that is the same as the substrate; and a nitride semiconductor layer which is grown from a crystallized inorganic thin film above the cavity. The method and apparatus for separating a nitride semiconductor layer according the present invention mechanically separate between the substrate and the nitride semiconductor layer. The mechanical separation can be performed by a method of separation of applying a vertical force to the substrate and the nitride semiconductor layer, a method of separation of applying a horizontal force, a method of separation of applying a force of a relative circular motion, and a combination thereof.

Semiconductor stacking structure, and method and apparatus for separating nitride semiconductor layer using same

Disclosed is a substrate structure and a method for forming the same, in which a high-quality nitride semiconductor layer may be formed with a reduced stress applied to the nitride semiconductor layer at the growth of the nitride semiconductor layer and also be easily separated from the substrate, and a semiconductor lamination structure using the same and a method for forming the same, and a method for manufacturing a nitride semiconductor using the same. The substrate structure includes a single-crystal substrate heterogeneous from a nitride semiconductor, and a crystallized inorganic thin film having a leg portion configured to contact the substrate to define an integrated cavity between the leg portion and the substrate and an upper surface extending from the leg portion and parallel to the substrate, the crystallized inorganic thin film having the same crystal structure as the substrate.

Substrate structure, method for forming same, and method for manufacturing nitride semiconductor using same

A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon.

Photodetector with plasmonic structure and method for fabricating the same

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.

Nitride semiconductor light emitting device

Growing community of inventors

Gyeonggi-do, South Korea

Yongjo Park