Samsung Electronics Co., Ltd.

Electronics and Telecommunications Research Institute

Lg Electronics Inc.

Hyundai Motor Company

Kia Motors Corporation

Korea Advanced Institute of Science and Technology

Markany Inc.

Yongjin Lee

Sangho Kim

Hyunsu Hong

Younseok Lee

Seungeun Lee

Junsoo Han

Taeho Kim

Jihwan Kim

Bokun Choi

Minji Kim

Ki Young Moon

Yun Su Chung

Jongho Park

Kwangho Kim

Ahreum Park

Hae Kyu Lim

Gyu-Hyeong Cho

Michael Choi

Hwan Shim

Kyo Il Chung

Dae-Yong Kim

Sungwon Yoo

Wonsok Lee

Jang-Hee Yoo

Inho Yun

Sung Uk Jung

Dae Sung Moon

Jung-Hwan Kim

Un-Byoung Kang

Jin Ho Park

Min Hee Cho

Yongseok Kim

Jeongmin Park

Younghyun Kim

Wonseok Lee

Sangil Park

Younghwan Kim

Jun Seok Choi

Minhee Cho

Jeong Hun Seo

Jeong Hwa Seo

Hyunsu Kim

Jinwoo Seo

Suho Lee

Dawoon Jung

Hyung-Sun Jang

Jun Ho Bang

Hyunseok Shin

Tae-Hwang Kong

Injo Jeong

Jooman Han

Hyejung Seo

Hongji Lee

Sangbeom Nam

Yooncheol Jeon

Jooseong Kim

Hansung Lee

Junhee Shin

Dongha Lee

Hyongmin Lee

Seki Kim

Seounghun Kim

Hyungjoon Lim

Sungyong Lee

Byeongbae Lee

Huije Ryu

Donghun Heo

Sunok Jung

Jiwoon Jung

Cheolhwan Lim

Eungi Min

Woo Yong Choi

Min Tae Ryu

Jaeryong Han

Jeahyuck Lee

Haejung Choi

Jeehoon Lee

Han Sung Lee

Mintae Ryu

Inha Lee

Hanseok Mun

Dong-Hun Yi

So-Hee Park

Wonkyu Lee

Choonghee Ahn

Jonguk Choi

Jongkeun Jeon

Haekyu Lim

Woonseong Kwon

Gitae Mun

Seunggoo Lee

Keeseok Kim

Jung-Pil Moon

Sukwang Lim

Youngbin Kwon

Sohyun Chung

Byung Jun Kang

Sander Land

Chansoo Park

Gahee Jung

A semiconductor memory device includes a substrate, a conductive line extending in a first horizontal direction above the substrate, an isolation insulating layer including a channel trench extending in a second horizontal direction intersecting with the first horizontal direction and extending from an upper surface to a lower surface of the isolation insulating layer, above the conductive line, a channel structure disposed above the conductive line, a gate electrode extending in the second horizontal direction, in the channel trench, a capacitor structure above the isolation insulating layer, and a contact structure interposed between the channel structure and the capacitor structure, wherein the channel structure includes an amorphous oxide semiconductor layer disposed in the channel trench above the conductive line, and an upper crystalline oxide semiconductor layer interposed between the amorphous oxide semiconductor layer and the contact structure.

Semiconductor memory device

Disclosed are semiconductor memory devices and their fabrication methods. The semiconductor memory device comprises a peripheral circuit structure including peripheral circuits on a semiconductor substrate and a first dielectric layer on the peripheral circuits, a cell array structure on the semiconductor substrate, and a shield layer between the peripheral circuit structure and the cell array structure. The cell array structure includes bit lines, first and second active patterns on the bit lines, first word lines that extend in a second direction on the first active patterns, second word lines that extend in the second direction on the second active patterns, data storage patterns on the first and second active patterns, and a second dielectric layer on the semiconductor substrate. A hydrogen concentration of the first dielectric layer is greater than that of the second dielectric layer.

Semiconductor memory device having shield layer between peripheral circuit and cell array structures

A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

Built-in self-test circuit and temperature measurement circuit including the same

An electronic device for providing biometric information is provided. The electronic device includes a sensor module, a memory, and a processor electrically connected to the sensor module and the memory. The processor obtains a biometric signal from the sensor module at a predetermined time interval, determines whether a user is in a first state on the basis of the obtained biometric signal, in case the user is in a first state, obtains a representative value for a respective of the at least one biometric signal, defines the obtained representative value for the respective of the at least one biometric signal as a candidate reference value for a corresponding biometric signal, determines a candidate reference value satisfying a predetermined condition as a first reference value for the corresponding biometric signal, and updates a second reference value previously configured for the corresponding biometric signal on the basis of the first reference value.

Electronic device and method for providing personalized biometric information based on biometric signal using same

A system-on-chip according to an embodiment includes a core including a header switch circuit configured to transmit a power supply voltage applied to a first power rail as a supply voltage to a second power rail and a logic circuit configured to operate based on the supply voltage from the second power rail, and a low-dropout (LDO) regulator configured to regulate a magnitude of first current output to the second power rail based on a change in the supply voltage, wherein the LDO regulator is further configured to control on/off of a plurality of first header switches included in the header switch circuit based on an amount of the change in the supply voltage.

System-on-chip including low-dropout regulator

An example electronic device may include a detection circuit and a processor operatively connected to the detection circuit. The processor may be configured to obtain a first signal associated with an external object through the detection circuit; obtain a first HR, using a first filter having an attribute of a first frequency band; obtain a second HR, using a second filter having an attribute of a second frequency band, based at least on the first signal; change at least some attributes associated with the second filter, based at least on the first HR and the second HR; obtain a second signal associated with the external object through the detection circuit; and generate heart rate variability (HRV) information, using the second filter, in which the at least some attributes are changed, based on the second signal.

Method for generating heart rate variability information related to external object by using plurality of filters, and device therefor

An electronic device may include a PPG sensor including a light emitter that applies a current in a specified range and emits a light signal corresponding to the current and a light detector that amplifies a received light signal by applying one of a plurality of gain values, a memory that stores a plurality of sets of PPG models corresponding to the plurality of gain values and including a current value and PPG level data corresponding to the current value, and at least one processor electrically connected to the PPG sensor and the memory.

Electronic device for acquiring biometrics using PPG sensor, and method therefor

An electronic device includes a housing, a touchscreen display viewable through a first part of the housing, a photoplethysmogram (PPG) sensor exposed through a second part of the housing, a processor disposed in the housing and operatively connected to the touchscreen display and the PPG sensor, and a memory disposed in the housing and operatively connected to the processor, wherein the memory stores instructions that, when executed, are configured to cause the processor to receive first data from the PPG sensor, generate second data by band-pass filtering the first data, generate oxygen saturation data based on at least some of the second data, select a first portion related to a first period of time from the second data, and display, on the touchscreen display, a graphical user interface including information related to the oxygen saturation data except for data corresponding to the first portion from the graphical user interface.

Electronic device for measuring biometric information and method for operating the same

An electronic device according to various embodiments may comprise: a memory storing instructions; at least one biometric sensor; a display; and at least one processor, wherein the at least one processor is configured to execute the stored instructions in order to: obtain biometric information of a user related with the electronic device by using the at least one biometric sensor; obtain first data indicating a cardiovascular state of the user from the biometric information; obtain second data indicating a relative difference between the first data and reference data indicating a cardiovascular state in a resting state of the user; and display, by using the display, an indication for indicating a health status of the user, on the basis at least of the second data.

Electronic device and method for providing information on cardiovascular state of user

A refrigerator may include a cabinet forming a storage compartment; a rear panel forming a rear wall of the storage compartment and having a cooling air outlet hole which discharges cooling air toward the storage compartment; a fan housing coupled to the rear panel and in which a fan configured to circulate cooling air is installed; an outlet port which is formed at the fan housing and discharges cooling air supplied by driving of the fan; and a drawer provided capable of being withdrawn forward from an inside of the storage compartment, wherein the drawer includes: a drawer body forming a storage space; and a cooling air duct provided above the drawer body and having a cooling air path in communication with the outlet port.

Refrigerator

An electronic device of a charging module system may include a housing having a first surface facing a first direction and a second surface facing a second direction opposite to the first direction; a display device at least partially is exposed through the first surface to display information to the outside; a biometric sensor disposed to be exposed in at least an area of the second surface and sensing biometric information of a user; a battery disposed between the display device and the biometric sensor; and a plurality of electrodes disposed adjacent to the at least an area of the second surface and formed to be exposed in at least another area of the second surface, in which the plurality of electrodes may surround at least a portion of the biometric sensor, and each of the plurality of electrodes has a notch protruding or recessed at least at one end.

Electronic device and charging module system comprising same

Growing community of inventors

Gyeonggi-do, South Korea

Yongjin Lee