Samsung Electronics Co., Ltd.

Yongjik Park

Jaehoon Jang

Siyoung Choi

JungWoo Seo

Joonsoo Park

Hyoungsub Kim

Cheolhong Kim

Kinam Kim

KyoungRyul Yoon

Seokwoo Nam

A method of forming a semiconductor device includes first preliminary holes over an etch target, the first preliminary holes arranged as a plurality of rows in a first direction, forming dielectric patterns each filling one of the first preliminary holes, sequentially forming a barrier layer and a sacrificial layer on the dielectric patterns, forming etch control patterns between the dielectric patterns, forming second preliminary holes by etching the sacrificial layer, each of the second preliminary holes being in a region defined by at least three dielectric patterns adjacent to each other, and etching the etch target layer corresponding to positions of the first and second preliminary holes to form contact holes.

Methods of forming a semiconductor device

Nonvolatile memory devices include an electrically insulating layer on a semiconductor substrate and a NAND-type string of nonvolatile memory cells on an upper surface of the electrically insulating layer. The NAND-type string of nonvolatile memory cells includes a plurality of vertically-stacked nonvolatile memory cell sub-strings disposed at side-by-side locations on the electrically insulating layer. A string selection transistor is provided, which includes a gate electrode extending between the electrically insulating layer and the semiconductor substrate and source and drain regions in the semiconductor substrate. A ground selection transistor is provided, which includes a gate electrode extending between the electrically insulating layer and the semiconductor substrate and source and drain regions in the semiconductor substrate.

Three-dimensional non-volatile memory devices having highly integrated string selection and sense amplifier circuits therein

Growing community of inventors

Suwon-si, South Korea

Yongjik Park